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Method for preparing transparent conductive film material

A transparent conductive film, zinc oxide film technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of low repeatability, complex preparation process, high cost, and improve light transmittance , the process is simple, the effect of high deposition rate

Inactive Publication Date: 2010-01-06
UNIV OF SCI & TECH BEIJING
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The invention mainly solves the contradictory problems that high light transmittance cannot be obtained at low temperature and high light transmittance cannot be obtained with low resistivity, and is solved by the key technology of oxygen loss and surface roughness control in the preparation process. One of the problems, and solve the problems of complex preparation process, high cost and low repeatability in the prior art, and solve the problem that the ratio of metal elements is difficult to control

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  • Method for preparing transparent conductive film material
  • Method for preparing transparent conductive film material
  • Method for preparing transparent conductive film material

Examples

Experimental program
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Embodiment 1

[0024] The Al-doped zinc oxide film was deposited by an intermediate frequency reactive magnetron sputtering system. The target materials were aluminum with a purity of 99.99% and zinc oxide with a purity of 99.99%. The double targets were co-sputtered and connected to the ALS-150R Hall ion source. The target and ion source are located around the vacuum chamber, the position is fixed, the substrate is placed in the center, and rotated at a speed of 40r / min, the distance between the center of the substrate and the target is 90mm. The background vacuum of the system is 5×10 -4 Pa, the working gas in the sputtering process is high-purity argon, the flow rate is 20 sccm, and the reaction gas is high-purity oxygen. Before coating, the ultra-clear glass substrate was ultrasonically cleaned in acetone for 30 minutes, then ultrasonically cleaned in alcohol for 10 minutes, then cleaned with deionized water and dried. Before the preparation, pre-sputter the aluminum metal target for 15...

Embodiment 2

[0029] The Al-doped zinc oxide film was deposited by an intermediate frequency reactive magnetron sputtering system. The target materials were aluminum with a purity of 99.99% and zinc oxide with a purity of 99.99%. The double targets were co-sputtered and connected to the ALS-150R Hall ion source. The target and the ion source are located around the vacuum chamber, the position is fixed, the substrate is placed in the center, rotated at a speed of 50r / min, and the distance between the center of the substrate and the target is 100mm. The background vacuum of the system is 1×10 -4 Pa, the working gas in the sputtering process is high-purity argon, the flow rate is 15 sccm, and the reaction gas is high-purity oxygen. Before coating, the ultra-clear glass substrate was ultrasonically cleaned in acetone for 30 minutes, then ultrasonically cleaned in alcohol for 10 minutes, then cleaned with deionized water and dried. Before the preparation, pre-sputter the aluminum metal target f...

Embodiment 3

[0034] The Al-doped zinc oxide film was deposited by an intermediate frequency reactive magnetron sputtering system. The target materials were aluminum with a purity of 99.99% and zinc oxide with a purity of 99.99%. The double targets were co-sputtered and connected to the ALS-150R Hall ion source. The target and ion source are located around the vacuum chamber, the position is fixed, the substrate is placed in the center, and rotated at a speed of 30r / min, the distance between the center of the substrate and the target is 90mm. The background vacuum of the system is 1×10 -4 Pa, the working gas in the sputtering process is high-purity argon, the flow rate is 10 sccm, and the reaction gas is high-purity oxygen. Before coating, the ultra-clear glass substrate was ultrasonically cleaned in acetone for 20 minutes, then ultrasonically cleaned in alcohol for 10 minutes, then cleaned with deionized water and dried. Before the preparation, pre-sputter the aluminum metal target for 10...

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Abstract

The invention provides a method for preparing a transparent conductive film material and relates to the preparation of the conductive film material. The invention adopts a medium-frequency reaction magnetic control sputtering system, washing and etching are carried out in a plasma by controlling a basal body before preparation, a metal Al target with higher purity and a ZnO target with high purity are adopted in the preparation process to carry out double-target co-sputtering, the double-target co-sputtering is aided by the plasma, a plasma etching technique is carried out after the preparation is finished, and the problem that the transparent conductive film with higher light transmittance and lower resistivity can not be obtained by low-temperature sedimentation is solved by controlling oxygen loss. The invention is simple and easy, effectively solves the problem that the proportion of metal elements is uncontrollable, has no pollution and simple technology, can use the prior ITO production line, can realize industrialized production without upgrading and reconstructing and has important research value and extensive application prospect, and all the raw materials are relatively common.

Description

technical field [0001] The invention relates to the preparation of a transparent conductive thin film material, in particular to a preparation method of a transparent conductive thin film material with high light transmittance, low resistivity, low cost and low temperature deposition. Background technique [0002] Transparent conductive oxide (TCO) thin films have been extensively studied and applied in many fields such as solar cells, liquid crystal displays, thermal mirrors, and energy-saving building glass due to their excellent photoelectric properties. Indium tin oxide (ITO) coated glass is a very mature product, which has the characteristics of high transmittance, firm film layer and good conductivity. It was initially used in the front electrode of photovoltaic cells. However, with the improvement of light absorption performance requirements, TCO glass must have the ability to improve light scattering, but it is difficult for ITO coating to achieve this, and the lase...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 庞晓露高克玮于广华杨会生刘泉林王燕斌
Owner UNIV OF SCI & TECH BEIJING
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