Method for preparing high purity, high density and high yield Si3N4/SiO2 coaxial nano-cable array

Abstract

The invention relates to a method for preparing Si3N4 / SiO2 coaxial nano-cable array with high purity, high density and high yield by using Si3N4 as an inner core and SiO2 as a housing, belonging to the technical field of material preparation. In the method, pyrolytic organic precursor is adopted to synthesize the Si3N4 / SiO2 coaxial nano-cable array on a substrate plated with metal catalyst. The method comprises: (1) polysilazane with high nitrogen content is crosslinked and cured at the low temperature of 160-300 DEG C, so that semitransparent amorphous SiCN solid can be obtained; (2) after being crosslinked and cured, the amorphous SiCN solid is processed by high energy ball-milling and crushed in a highly abrasion resistant appliance; (3) after high energy ball-milling, the obtained precursor powder is processed by pyrolysis and then evaporatedunder the protection of carrier gas containing a certain amount of oxygen, and then is deposited on the substrate plated with the metal catalyst film, so that the Si3N4 / SiO2 coaxial nano-cable array is obtained. The method has simple synthesis technique and equipment, strong controllability of technological parameters and low cost; the obtained Si3N4 / SiO2 coaxial nano-cables grow orderly, and arehigh in yield, density and purity as well as uniform in diameter distribution. The structure of the synthesized coaxial nano-cables has wide application prospect in the aspects of an atomic force microscope, a near-field optical microscope, nano mechanical probe, novel nano composite material reinforcing agent, etc.

Description

technical field [0001] The invention relates to a high-purity, high-density, high-yield Si 3 N 4 / SiO 2 The invention discloses a preparation method of a coaxial nanometer cable array, belonging to the technical field of material preparation. Background technique [0002] Since the discovery of the C-BN-C coaxial system in the products obtained by arc discharge in 1997 by French scientists Colliex and others and naming it coaxial nanocables, coaxial nanocables have aroused great interest of scientists from all over the world, and soon became a nanometer A hotspot in materials research. The core of the coaxial nanocable is usually a semiconductor or metal nanowire, and the sheath is a heterogeneous conductor or insulator shell, and the core and the sheath are coaxial. With its special core / shell structure and unique optical, electrical, and magnetic properties, coaxial nanocables have broad application prospects in many fields. It can be used as a connecting line between ...

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Problems solved by technology

At present, only G.Z.Ran et al. (G.Z.Ran, L.P.You, L.Dai, et al.Catalystless synthesis of crystalline Si 3 N 4 / amorphous SiO 2 nanocables from silicon substrates and N 2 .Chemical Physics Letters, 2004, 384: 94-97) Synthesized on a silicon wafer without a catalyst to obtain disordered Si 3 N 4 / SiO 2 Coaxial nano-cables, but the disordered distribution will limit the application of nano-cables, because the construction of nano-devices requires the orderly assembly of one-dimensional nano-materials to make them have an array structure and realize the design of their properties regulation, which is also the basis for the design of nano-ultraminiature devices

There is no information about Si 3 N 4 / SiO 2 Literature Reports on Coaxial Nanocable Arrays

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