Field measurement device of wave aberration of projection objective in photo-etching machine
A projection objective lens and on-site measurement technology, applied in the field of optical measurement, can solve problems such as the decrease of transmittance and the impact on measurement accuracy, and achieve the effects of high absolute measurement accuracy, cost reduction, and easy integration
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[0035] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0036] First introduce the lithography machine system, its composition block diagram is as follows figure 1 As shown, it includes: a light source 101 , an illumination system 102 , a mask 103 , a mask stage 104 , a projection objective lens 105 , a silicon wafer 106 and a silicon wafer stage 107 .
[0037] The working principle of the lithography machine is as follows: after passing through the illumination system 102, the light emitted by the light source 101 is irradiated on the mask 103, and the pattern on the mask 103 is passed through the projection objective lens 105, and the projection is reduced in a "step-scan" manner. On the silicon wafer 106 coated with photoresist, so as to realize the pattern transfer. Wherein, the light source 101 is an excimer laser light source, such as an ArF excimer laser with a wavelength of about 193 nm or ...
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