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Method for temperature drift compensation for film body acoustic wave oscillator and circuit

A thin-film bulk acoustic wave, temperature drift technology, applied in the field of microelectronics, can solve problems such as system errors

Inactive Publication Date: 2009-12-02
ZHEJIANG UNIV
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Problems solved by technology

[0008] The invention provides a temperature drift compensation method and circuit of a film bulk acoustic wave oscillator (FBAR), which solves the problem of the existing FBAR oscillator, especially the FBAR oscillator working in the C-band and X-band due to the frequency difference at different temperatures. Various system errors caused by drift can improve the application effect and product productivity in wireless communication and quality sensing

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  • Method for temperature drift compensation for film body acoustic wave oscillator and circuit
  • Method for temperature drift compensation for film body acoustic wave oscillator and circuit
  • Method for temperature drift compensation for film body acoustic wave oscillator and circuit

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Embodiment Construction

[0065] A film bulk acoustic oscillator (FBAR) is a sandwich structure composed of a piezoelectric film layer and upper and lower plates, which can be used as an oscillator, filter, mass sensor, etc.

[0066] The FBAR oscillating circuit generally includes an FBAR device and a radio frequency voltage source. The RF voltage source applies RF voltage to the upper and lower electrodes of the FBAR, and the FBAR oscillates, and its resonant frequency is determined by the thickness of the piezoelectric film. The calculation formula is:

[0067] F ≈ v 2 d - - - ( 1 )

[0068] where F is the FBAR resonant frequency,

[0069] v is the sound velocity of the piezoelectric layer,

[0070] d is the thickness of the piezoelectric layer.

[0071] figure 1 Taking a simple FBAR oscillating circuit 20 as an example, it is...

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Abstract

The invention discloses a method for temperature drift compensation of a film body acoustic wave oscillator and a circuit. The method is mainly provided with an electric bridge containing a temperature sensitive resistor and a direct current stabilized voltage source for supplying power for the electric bridge, and two output ends of the electric bridge are connected with an upper electrode and a lower electrode of the film body acoustic wave oscillator through a first high-impedance resistor and a second high-impedance resistor respectively, wherein the ratio of the frequency temperature coefficient alpha to the frequency voltage coefficient beta of the film body acoustic wave oscillator is U0lambda, the U0 is the direct current voltage of the direct current stabilized voltage source, and the lambda is a resistance temperature coefficient reference value of the electric bridge. The method effectively compensates the frequency deviation of the film body acoustic wave oscillator (FBAR) caused by the temperature, and can also achieve complete unbiased compensation, thereby solving the problem of various system errors caused by temperature changes, and improving the application effect and the product yield of the FBAR in the aspects of wireless communication and quality sensing. The method and the circuit have the advantages of simple structure and flexible implementation mode.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to a temperature drift compensation method and circuit of a thin film bulk acoustic wave oscillator. technical background [0002] Film bulk acoustic oscillator (FBAR) has been widely used in wireless communication systems in recent years due to its high operating frequency, high sensitivity, excellent filtering characteristics, low insertion loss, high power carrying capacity, and good compatibility with integrated circuit technology. , such as duplexers, oscillators, resonators, and other frequency-related components in radio frequency front-ends for wireless communications. In addition, FBAR is more and more widely used as a micromass sensor because of its high quality change sensitivity, easy packaging, and low manufacturing cost, and is used in the fields of chemistry and biology. [0003] Most FBAR devices have a bandpass characteristic frequency response characterized by a ce...

Claims

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Application Information

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IPC IPC(8): H03L1/02H03H9/58H03H9/13H03H9/60
Inventor 赵士恒董树荣程维维张慧金韩雁
Owner ZHEJIANG UNIV
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