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Inner cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device

A vertical cavity surface emission, photonic crystal technology, applied in the field of optoelectronics, can solve the problems of difficult control of small oxide holes, poor thermal stability of devices, low single-mode output power, etc., to achieve narrow line width and improve thermal stability. , emphasize the effect of the control feature

Inactive Publication Date: 2009-11-25
BEIJING UNIV OF TECH
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Problems solved by technology

Such a small oxide pore size will inevitably lead to a large series resistance
At the same time, a large series resistance will inevitably generate a lot of heat, which will deteriorate the thermal stability of the device.
It is difficult to control the process of making small oxidation holes 9
The smaller oxidation hole 9 makes the effective light-emitting area smaller and the single-mode output power is low

Method used

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  • Inner cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device
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  • Inner cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device

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Embodiment Construction

[0032] (Take the wavelength 850nm as an example)

[0033] 1. Pass in N + The substrate 7 was obtained by growing on a GaAs substrate of type 1, and then a 0.3 micron GaAs buffer layer was grown on the substrate by MOCVD method, and then N + al 0.1 Ga 0.9 As (60nm doping concentration 3×10 18 cm -3 ) and n + al 0.9 Ga 0.1 As (68.19nm doping concentration 3×10 17 cm -3 ) composed of 28 cycles of the lower DBR6, In 0.18 al 0.12 Ga 0.7 As and Al 0.22 Ga 0.78 AS composed of single active region 5 heavily doped N + GaAs and P + Multiple active regions (three active regions) cascaded with GaAs reverse tunnel junctions 14, Al 0.98 Ga 0.02 As (30nm doping concentration 1×10 18 cm -3 ) oxidation limiting layer 4, Al 0.1 Ga 0.9 As heavily doped ohmic contact layer 2, undoped Al 0.1 Ga 0.9 As(60nm) and Al 0.9 Ga 0.1 24-period upper DBR3 composed of As (68.19nm).

[0034] 2. Using the traditional oxidation-limited vertical cavity surface-emitting semiconductor las...

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Abstract

The invention relates to an inner cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device, belonging to the semiconductor photoelectron field. The common oxidation limiting vertical cavity surface transmission semiconductor laser device has problems of multiple-transverse module laser shooting, low single module output power, large threshold current and large series resistance and so on. The invention adopts the multiple-active region structure on the active region of the device, meanwhile leads the defect type photon crystal structure into DBR on the vertical cavity surface transmission semiconductor laser device, the inner cavity type multiple-active region photon crystal vertical cavity surface transmission semiconductor laser device with dozens of micrometres of single module operation oxidation bore diameter, dozens of mws of single module power, dozens of Ohms of series resistances and more than 40 dbs of side module inhibition can be obtained by optimizing the photon crystal period, the air bore diameter, the etching depth, the device diameter and the oxidation bore diameter and so on reasonably.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and in particular relates to the design and manufacture of a novel vertical cavity surface emitting semiconductor laser. Background technique [0002] Vertical cavity surface emitting laser (VCSEL) has the advantages of low threshold current, dynamic single longitudinal mode operation, small divergence angle, circular symmetric beam, high modulation bandwidth, easy two-dimensional integration, etc., and can be widely used in optical communication, optical storage and optical display and other fields. [0003] Common oxidation-limited vertical-cavity surface-emitting semiconductor lasers are structurally divided into two types: inner-cavity and outer-cavity. The material of the inner-cavity vertical-cavity surface-emitting semiconductor laser is mainly composed of III-V compound semiconductor materials through molecular beam epitaxy ( MBE) or metal chemical vapor deposition (MOCVD) epitax...

Claims

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Application Information

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IPC IPC(8): H01S5/183H01S5/065H01S5/06H01S5/20
Inventor 徐晨解意洋沈光地陈弘达阚强王春霞刘英明王宝强
Owner BEIJING UNIV OF TECH
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