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Ion-doped tin dioxide porous film type gas sensitive device and method for manufacturing same

A technology of tin dioxide and porous film, which is applied in semiconductor/solid-state device manufacturing, electrical components, instruments, etc. It can solve the problems of poor selectivity and high working temperature, and achieve the effect of less equipment, low working temperature and fast response speed

Inactive Publication Date: 2009-11-11
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although the stability of the prepared tin dioxide thin film gas sensor has been improved, the poor selectivity of the tin dioxide-based semiconductor gas sensor and the excessively high defects of the operating temperature have not yet been overcome.

Method used

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  • Ion-doped tin dioxide porous film type gas sensitive device and method for manufacturing same
  • Ion-doped tin dioxide porous film type gas sensitive device and method for manufacturing same
  • Ion-doped tin dioxide porous film type gas sensitive device and method for manufacturing same

Examples

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Embodiment 1

[0019] The specific steps of preparation are as follows: first, the polystyrene colloidal spheres with a diameter of 200 nm are attached to the surface of the substrate by a spin coating method to form a single-layer colloidal crystal template. Then, in the first step, adding palladium dichloride to obtain a precursor solution in the tin tetrachloride solution whose concentration is 0.05M; wherein, the palladium ion in the palladium dichloride and the tin ion in the tin tetrachloride solution The molar ratio is 0.005:1. In the second step, the single-layer colloidal crystal template is first immersed in the precursor solution, and after it is detached from the substrate and floats on the surface of the precursor solution, the single-layer colloidal crystal is picked up with a substrate with electrodes of the desired shape, and Make it cover the surface of the substrate, and then heat the substrate covered with a single layer of colloidal crystals and soaked in the precursor so...

Embodiment 2

[0021] The specific steps of preparation are as follows: first, the polystyrene colloidal spheres with a diameter of 200 nm are attached to the surface of the substrate by a spin coating method to form a single-layer colloidal crystal template. Then, in the first step, adding palladium dichloride to obtain a precursor solution in the tin tetrachloride solution whose concentration is 0.08M; wherein, the palladium ion in the palladium dichloride and the tin ion in the tin tetrachloride solution The molar ratio is 0.01:1. In the second step, the single-layer colloidal crystal template is first immersed in the precursor solution, and after it is detached from the substrate and floats on the surface of the precursor solution, the single-layer colloidal crystal is picked up with a substrate with electrodes of the desired shape, and Make it cover the surface of the substrate, and then heat the substrate covered with a single layer of colloidal crystals and soaked in the precursor sol...

Embodiment 3

[0023] The specific steps of preparation are as follows: first, the polystyrene colloidal spheres with a diameter of 200 nm are attached to the surface of the substrate by a spin coating method to form a single-layer colloidal crystal template. Then, in the first step, add palladium dichloride to obtain a precursor solution in the tin tetrachloride solution that concentration is 0.1M; Wherein, the palladium ion in the palladium dichloride and the tin ion in the tin tetrachloride solution The molar ratio is 0.03:1. In the second step, the single-layer colloidal crystal template is first immersed in the precursor solution, and after it is detached from the substrate and floats on the surface of the precursor solution, the single-layer colloidal crystal is picked up with a substrate with electrodes of the desired shape, and Make it cover the surface of the substrate, and then heat the substrate covered with a single layer of colloidal crystals and soaked in the precursor solution...

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Abstract

The invention discloses an ion-doped tin dioxide porous film type gas sensitive device and a method for manufacturing same. The device is a gas sensitive film which is coated on a substrate and an electrode and consists of more than one layer of spherical poroid tin dioxides which are arranged tightly and hexagonally and communicated with one another and are doped with palladium ions or chromium ions. The method comprises the following steps: attaching a colloid ball to the surface of the substrate to form a single-layer colloid crystal template; then adding palladium chloride or chromium trichloride into tin tetrachloride solution of which the concentration is between 0.05 and 0.2 M to obtain precursor solution; dipping the single-layer colloid crystal template into the precursor solution first, using the substrate with an electrode and a required shape to fish out the single-layer colloid crystal template, covering the single-layer colloid crystal template on the surface of the substrate, and then heating the substrate at a temperature of between 80 and 120 DEG C for 1 to 4 hours; and repeating the steps of dipping, fishing out and heat curing for more than 0 time, and annealing the substrate at a temperature of between 350 and 550 DEG C for 1 to 4 hours to obtain the ion-doped tin dioxide porous film type gas sensitive device. The ion-doped tin dioxide porous film type gas sensitive device can be widely applied to performing selective detections on mixed gases.

Description

technical field [0001] The invention relates to a gas sensor and a preparation method, in particular to an ion-doped tin dioxide porous film gas sensor and a preparation method thereof. Background technique [0002] With the development of the chemical industry, the types and applications of flammable, explosive, toxic gases and volatile liquids have been rapidly increased and expanded. In the process of production, transportation and use of these gases or liquids, once Leakage will cause poisoning, fire or even explosion accidents, seriously endangering people's lives and property safety. Therefore, timely and reliable detection of the composition and content of certain gases in the air is necessary. For many years, tin dioxide has been widely used in sensors as an n-type semiconductor. A large number of experimental results have proved that various materials based on tin dioxide are not only effective for reducing gases such as carbon monoxide, methane, hydrogen, ammonia,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/407H01L21/00
Inventor 贾丽超蔡伟平王洪强孙丰强李越
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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