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Microstrip resonance structure Terahertz wave modulation apparatus and method thereof

A technology of resonance structure, terahertz wave passing through terahertz wave, applied in the field of terahertz wave application, to achieve the effect of simple and convenient operation, compact structure and easy processing

Inactive Publication Date: 2009-10-07
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the application of BWO is either used for spectrum analysis or imaging detection, but there is no such technology at home and abroad to apply BWO to THz wave communication

Method used

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  • Microstrip resonance structure Terahertz wave modulation apparatus and method thereof
  • Microstrip resonance structure Terahertz wave modulation apparatus and method thereof

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Embodiment

[0020]Terahertz wave modulation with 0.87THz frequency:

[0021] The BWO sold by Microtech was selected as the terahertz source, and the model of the retro-wave tube was QS1-900ov81 (the frequency was tunable in the 0.6-0.9THz frequency band), and the computer controlled the BWO output wave to change in the 0.6-0.9THz frequency band. The frequency of the terahertz wave used for terahertz communication is 0.87THz, the working wavelength of the modulated semiconductor laser is 680nm, the power is 50mW, and the laser emission direction of the modulated semiconductor laser is between the incident direction of the terahertz wave emitted by the terahertz wave source The included angle is 15°. The microstrip resonance structure unit is 60×60; the diameter of the microstrip resonance structure unit is 80 μm and the thickness is 300 nm. The period of the microstrip resonance structure array is 55μm. The high-resistance silicon substrate has a refractive index of 3.6, a thickness of 0.5 mm,...

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Abstract

The invention discloses a microstrip resonance structure Terahertz wave modulation apparatus and the method thereof. The apparatus comprises a Terahertz wave source, a microstrip resonance structure array, a high-resistance silicon substrate, a Terahertz wave detector and a modulatable semiconductor laser; the microstrip resonance structure array is sputtered on the high-resistance silicon substrate; the Terahertz wav from the Terahertz wave source is propagated to the microstrip resonance structure array, and is propagated out through the Terahertz wave detector by the Terahertz wave modulated by the high resistance silicon substrate; the modulatable semiconductor laser is disposed on the same direction of the Terahertz wave source; the included angle between the laser shot direction of the modulatable semiconductor laser and the incidence direction of the Terahertz wave from the Terahertz wave source is 0-30 degrees; and the microstrip resonance structure array is composed by a plurality of microstrip resonance structure units. The invention achieves the advantages of high modulation speed, large modulation bandwidth, small size, compact, easily machined, and simple and convenient operation; is not sensitive to Terahertz wave, can meet the high speed communication demand of Terahertz wave.

Description

Technical field [0001] The invention relates to the technical field of terahertz wave applications, and in particular to a terahertz wave modulation device and a method for a microstrip resonance structure. Background technique [0002] Wireless communication is facing the contradiction between limited spectrum resources and rapidly increasing bandwidth and high-speed service requirements. Terahertz (THz, 1THz=10E+12Hz) communication refers to space communication using terahertz waves as an information carrier. Because the terahertz wave is between microwave and far-infrared light and is in the transitional field of electronics to photonics, it integrates the advantages of microwave communication and optical communication. Compared with microwave communication: 1) Terahertz communication has a larger transmission capacity. The frequency band of terahertz wave is between 0.1THz and 10THz, which is 1 to 4 orders of magnitude higher than microwave communication, and can provide wire...

Claims

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Application Information

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IPC IPC(8): G02F1/35H04B10/155H04B10/516
Inventor 李九生
Owner CHINA JILIANG UNIV
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