Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Trichlorosilane differential pressure coupling rectification system and operation method thereof

A technology of trichlorosilane and differential pressure coupling, applied in the field of rectification, can solve the problems of many theoretical plates, high energy consumption of polysilicon, large reflux ratio, etc., to save energy loss, reduce production costs and energy consumption, and reduce energy consumption. The effect of consumption

Inactive Publication Date: 2009-09-23
TIANJIN UNIV
View PDF0 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing trichlorosilane rectification process is a conventional rectification technology, and the polysilicon industry consumes a lot of energy due to many theoretical plates and a large reflux ratio

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trichlorosilane differential pressure coupling rectification system and operation method thereof
  • Trichlorosilane differential pressure coupling rectification system and operation method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0028] The operation method of Process A using low pressure distillation tower (2) feed is as follows:

[0029] Such as figure 1 As shown, after the trichlorosilane raw material (1) is separated by the low pressure rectification tower (2), the light component A (9) is divided into reflux material A (11) according to a certain reflux ratio after passing through the condenser (3) at the top of the tower And the produced material A (10), the light-removed liquid A (12) at the bottom of the tower is divided into two parts, and one part enters the tower kettle to condense the reboiler (4) after heating to form a high boiling liquid A (13) and return to the low pressure tower (2) , The other part enters the pressure tower (5) after rectification to form high boiling liquid A (14) at the bottom of the tower, and forms trichlorosilane gas phase A (15) at the top of the tower and enters the heating medium inlet of the condensation reboiler (4) , After providing the required heat for the c...

example 2

[0040] The operation method of process B using pressurized distillation tower (5) feed is as follows:

[0041] Such as figure 2As shown, the operation method of process B is: after the trichlorosilane raw material (1) is separated by the pressurized distillation tower (5), the light component B (19) at the top of the tower enters the condensation reboiler (4) The heating medium inlet of) provides the required heat for the condensing reboiler and becomes the condensate liquid B (23). After passing through the auxiliary condenser (6), part of it is returned to the top of the pressurizing tower (5) and part of it is extracted. The tower kettle light liquid B (21) is heated by the tower kettle reboiler (7) to form reboiled steam (20) and returns to the pressurizing tower (5). The other part uses the pressure difference between the two towers to directly enter the low pressure as the feed The tower (2) performs separation. After the trichlorosilane gas phase B (27) at the top of the lo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a trichlorosilane differential pressure coupling rectification system and an operation method thereof. The system comprises a low pressure rectifying tower, a pressurizing rectifying tower, a tower kettle reboiler, an overhead condenser and an auxiliary condenser; a condensation reboiler is arranged between the low pressure rectifying tower and the pressurizing rectifying tower, a vapor phase material outlet on the top of the pressurizing rectifying tower is connected with a heating medium inlet of the condensation reboiler, and a heating medium outlet returns to the top of the pressurizing rectifying tower; a liquid phase material outlet at the bottom of the low pressure rectifying tower is connected with a heated medium inlet of the condensation reboiler, and a heated medium outlet returns to the bottom of the low pressure rectifying tower. Raw materials are fed through different towers, so that two sets of process flow can be adopted; the process flow A adopts a low pressure tower as a front tower for removing lightness, and a feeding pump is added for feeding a pressurizing tower; the process flow B adopts the pressurizing tower as the front tower for removing lightness, and the feeding pump is not needed to be added for feeding the low pressure tower. The invention greatly reduces the production cost and energy consumption, and saved energy by about 40% in rectification. The technology remarkably improves the market competitiveness of the polysilicon material.

Description

Technical field [0001] The invention relates to the technical field of rectification, in particular to a trichlorosilane differential pressure coupled rectification system and an operation method. Background technique [0002] Polysilicon is the main raw material for manufacturing integrated circuit substrates, solar cells and other products. Polycrystalline silicon can be used to prepare monocrystalline silicon, and its deep-processed products are widely used in the semiconductor industry as a basic material for artificial intelligence, automatic control, information processing, photoelectric conversion and other devices. [0003] Solar grade and electronic grade polysilicon can be prepared from metallurgical grade polysilicon by converting solid metallurgical grade silicon into liquid trichlorosilane and other chlorosilanes, then rectifying and purifying it to remove impurities, and then using hydrogen to The purified chlorosilane is reduced to elemental silicon, which is in th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107C01B33/03
CPCY02P20/10
Inventor 黄国强王红星李鑫钢张敏革
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com