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Bismuth-based dielectric material for microwave tuning and preparation thereof

A dielectric material, bismuth-based technology, applied in the field of microelectronic materials, can solve the problems of increased dielectric loss, etc., and achieve the effect of low dielectric loss and high dielectric tuning rate

Inactive Publication Date: 2009-05-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

3. In the alternating electromagnetic field, there is a dielectric loss due to factors such as the polarization relaxation of the medium
However, due to the introduction of polar components, it will simultaneously cause an increase in dielectric loss

Method used

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  • Bismuth-based dielectric material for microwave tuning and preparation thereof
  • Bismuth-based dielectric material for microwave tuning and preparation thereof
  • Bismuth-based dielectric material for microwave tuning and preparation thereof

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Embodiment

[0030] In this example, Mg is used to replace Zn in the bismuth zinc niobate (BZN) material, and the chemical composition is Bi 1.5 MgNb 1.5 o 7 (BMN) bismuth magnesium niobate material. Mg in this material 2+ Ions have a higher ratio than Zn 2+ The smaller the radius, it is inferred that the material should have a higher dielectric tuning rate than the BZN material. The BMN thin film was prepared by radio frequency magnetron sputtering, and the dielectric properties of the BMN thin film were studied. It was found that the BMN thin film material has the characteristics of high dielectric tuning rate and low dielectric loss, and is suitable for voltage-controlled microwave frequency. An excellent dielectric material for components.

[0031] The dielectric film preparation process is as follows:

[0032] 1. Preparation of bismuth magnesium niobate ceramic materials.

[0033] Preparation of Bi 1.5 MgNb 1.5 o 7 Ceramic materials use a solid-state reaction method. Analyt...

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Abstract

The invention relates to a bismuth-based dielectric material for a microwave tuning component. Through the research on the dielectric tuning mechanism of a bismuth zinc niobate material with a structure of bismuth-based pyrochlore and based on the in-depth understanding of the dielectric tuning mechanism of materials with a bismuth-based pyrochlore structure, the invention provides an assumption and an executive plan to strengthen the dielectric tunable characteristics of the materials with the bismuth-based pyrochlore structure, and discloses a dielectric material for microwave tuning and a method for preparing the same. The chemical composition of the bismuth-based dielectric material for the microwave tuning is Bi1.5MNb1.5O7, wherein M is a bivalent metal cation, the ion radius of the M is smaller than that of Zn; particularly, the M ion is Mg ion, and the chemical formula of the dielectric material is Bi1.5MgNb1.5O7. The invention also discloses a method for preparing the bismuth-based dielectric material for the microwave tuning. The dielectric material of the invention is an excellent dielectric material applied to a voltage-controlled microwave frequency component.

Description

technical field [0001] The invention relates to microelectronic materials, in particular to a bismuth-based dielectric material used for microwave tuning components. Background technique [0002] Since the advent of microwave technology half a century ago, it has developed rapidly and is widely used. With the progress of integration technology, microwave devices have been developed to VLSIC (Very Large Scale Integrated Circuit) stage, and the line width reaches sub-micron level. In order to meet the development requirements of high-frequency and broadband communications in the future, MMICs in the micron band have been studied since the 1990s. The development of new high-frequency integrated microwave chips has put forward higher requirements for microwave devices, such as: fast response speed, wide frequency selection capability, high sensitivity and good temperature stability, etc., in order to complete the transmission of microwave signals, Phase shifting, filtering and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/622
Inventor 蒋书文李言荣刘兴钊陶佰万陈远富
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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