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Production method of amorphous silicon laminated solar cell

A solar cell, amorphous silicon technology, applied in circuits, electrical components, final product manufacturing, etc., can solve problems such as increasing battery operating temperature and decreasing battery performance

Inactive Publication Date: 2009-05-13
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Not only that, but the thermal effect generated by these photons will also increase the operating temperature of the battery and reduce the performance of the battery

Method used

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Examples

Experimental program
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Effect test

example 1

[0025] Example of the present invention utilizes PECVD (Plasma Enhanced Chemical Vapor Deposition) technology to prepare each film layer, specifically comprising the following steps:

[0026] (1) Clean the substrate

[0027] (2) P-type amorphous silicon carbide film is prepared on the substrate, and each gas flow rate of wherein feeding is: B 2 h 6 : 30 sccm, CH 4 : 30sccm, SiH 4 : 45sccm, RF power is 120W, substrate temperature is 230℃;

[0028] (3) Prepare I-type amorphous silicon film on P-type amorphous silicon carbide film, wherein the flow rate of each gas introduced is: SiH 4 : 30sccm, RF power is 120W, substrate temperature is 220℃;

[0029] (4) N-type microcrystalline silicon thin film is prepared on I-type amorphous silicon thin film, and each gas flow rate of wherein feeding is: PH 3 : 25 sccm, SiH 4 : 20sccm, RF power is 120W, substrate temperature is 220℃;

[0030] (5) prepare P-type amorphous silicon carbide film at N-type microcrystalline silicon film, w...

example 2

[0039] (1) Clean the substrate

[0040] (2) P-type amorphous silicon carbide film is prepared on the substrate, and each gas flow rate of wherein feeding is: B 2 h 6 : 25 sccm, CH 4 : 35 sccm, SiH 4 : 40sccm, RF power is 100W, substrate temperature is 210℃;

[0041] (3) Prepare I-type amorphous silicon film on P-type amorphous silicon carbide film, wherein the flow rate of each gas introduced is: SiH 4 : 25sccm, RF power is 100W, substrate temperature is 200℃;

[0042] (4) The N-type microcrystalline silicon film is prepared on the I-type amorphous silicon film, and the flow rate of each gas introduced is: PH 3 : 30sccm, SiH 4 : 15sccm, RF power is 100W, substrate temperature is 200℃;

[0043] (5) prepare P-type amorphous silicon carbide film at N-type microcrystalline silicon film, wherein the flow of each gas that feeds is: B 2 h 6 : 50 sccm, CH 4 : 20sccm, SiH 4 : 15sccm, RF power is 100W, substrate temperature is 210℃;

[0044] (6) Prepare an I-type amorphous s...

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Abstract

The invention relates to a preparation process of an amorphous silicon tandem thin film solar cell, and the cell adopts a solar cell model with the structure of a glass substrate / TCO (transparent conductive thin film) / a top layer of PIN amorphous silicon thin film / a second layer of PIN amorphous silicon thin film / a third layer of PIN amorphous silicon thin film / an Al bottom electrode. The main process steps are as follows: (1) cleaning the substrate; (2) preparing the TCO (transparent conductive thin film); (3) preparing the top layer of PIN amorphous silicon thin film; (4) preparing the second layer of PIN amorphous silicon thin film; (5) preparing the third layer of PIN amorphous silicon thin film; (6) and preparing the Al electrode. The tandem solar cell is significantly characterized in that materials with the different forbidden band widths are combined together, thereby widening the scope of spectral response, effectively preventing the light-induced degradation, so as to improve the photovoltaic conversion efficiency and the stability of the cell. Simultaneously, the preparation process is simple, and the large-scale production can be realized.

Description

technical field [0001] The invention belongs to the technical field of manufacturing amorphous silicon solar cells, and in particular relates to a method for preparing an amorphous silicon stacked solar cell. Background technique [0002] The energy crisis and environmental pollution are major challenges facing mankind, and the development of new energy and renewable clean energy is one of the most influential technical fields in the 21st century. According to the forecast of the World Energy Council and the International Institute of Applied Systems Analysis, the global fossil fuels will not be used for 100 years, and because of the CO emitted by burning fossil fuels 2 With the increase of the energy consumption index, the gas and other gases have seriously damaged the ecological balance. It has caused a series of problems such as the greenhouse effect and acid rain. Seeking a renewable, pollution-free clean energy has become an urgent task. It is in this situation that ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20
CPCY02P70/50
Inventor 曾祥斌赵伯芳王慧娟宋志成陆晶晶曾瑜
Owner HUAZHONG UNIV OF SCI & TECH
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