Chemical vapor deposited silicon carbide articles

A technology of chemical vapor deposition and silicon carbide, which is applied in the direction of gaseous chemical plating, chemical instruments and methods, electrical components, etc., can solve many problems such as time and cost, and achieve the effect of reducing particle pollution, reducing difficulty, and reducing TP

Active Publication Date: 2013-04-24
TOKAI CARBON CO LTD +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Requires more time and expense to achieve desired tight tolerances in joints made of CVD-SiC

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical vapor deposited silicon carbide articles
  • Chemical vapor deposited silicon carbide articles
  • Chemical vapor deposited silicon carbide articles

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] Example 1 (comparative)

[0069] Three types of joints were prepared to test their strength using the standard test method used to test joint strength. There are two types of joints including round CVD-SiC end plates and corresponding rectangular CVD-SiC rods for inserting into the side interfaces of each end plate. The third type of joint is composed of a circular sintered silicon carbide end plate and a corresponding rectangular sintered silicon carbide rod body for inserting into the side interface of the end plate. It is made by the known CVD-SiC method and obtained CVD-SiC end plates and rods from the Advanced Materials Department of Rohm and Haas Company (Woburn, Massachusetts, USA). By a known sintering method, silicon is immersed in sintered silicon carbide to make the sintered silicon carbide end plate and rod body.

[0070] The CVD-SiC rod is inserted into the interface of the CVD-SiC end plate to form a known male-female joint to form the first type of joint. ...

Embodiment 2

[0082] Example 2 (comparative)

[0083] Three types of wafer boats are prepared by CVD-SiC to compare their TP, and they are distinguished by the type of joints connecting the components. In a chemical vapor deposition furnace tube, silicon carbide is deposited on a graphite mandrel of appropriate shape and size to prepare the CVD-SiC component. The reaction components and parameters used are disclosed in Table 2.

[0084] Table 2

[0085] Process parameters

[0086] After the parts are formed on the mandrel, they are removed and machined with 220 grit diamond tools to remove any unwanted rough surfaces formed during deposition and shape the parts. Then, the components are assembled to form 3 wafer boats each with different types of joint combinations. Each wafer boat includes 3 rectangular rods connected to end plates at their opposite ends. Assemble all the wafer boats in a known jig so that their parts are properly aligned with the desired dimensional tolerances.

[0087]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

Chemical vapor deposited silicon carbide articles and the methods of making them are disclosed. The chemical vapor deposited silicon carbide articles are composed of multiple parts which are joined together by sintered ceramic joints. The joints strengthen and maintain tolerances at the joints of the articles. The articles may be used in semi-conductor processing.

Description

Technical field [0001] The invention relates to chemical vapor deposited silicon carbide products. More particularly, the present invention relates to chemical vapor deposited silicon carbide products with improved strength and dimensional tolerances. Background technique [0002] In the ceramic industry, many types of silicon carbide are known. Each type is classified by its manufacturing method. Each method provides silicon carbide with one or more different physical or structural properties. Examples of different types of silicon carbide include: chemical vapor deposited silicon carbide, reaction bonded silicon carbide, sintered silicon carbide, hot-pressed silicon carbide, and foamed carbide bricks. Although different types of silicon carbide have one or more overlapping properties, they are different and can be easily distinguished by X-ray diffraction analysis and chemical analysis. The applications of various silicon carbides often depend on their different physical an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C04B37/00H01L21/67C30B35/00
CPCH01L21/67306C23C16/325C04B2237/083C04B2237/16C04B2237/365C30B35/00C04B2237/88C04B37/006C04B37/005C04B2237/80Y10T428/26Y10T428/292Y10T428/24174C04B41/80C04B41/85
Inventor M·A·皮克林J·L·特里巴K·D·莱斯
Owner TOKAI CARBON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap