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Passivation encapsulation method for back electrode of solar cell

A technology for solar cells and packaging methods, applied in the fields of circuits, electrical components, sustainable manufacturing/processing, etc., can solve problems such as affecting electrical properties and affecting the efficiency of amorphous silicon solar cells

Inactive Publication Date: 2009-04-01
上海拓引数码技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As long as there is a small amount of contamination on the surface (such as water vapor, dust, oxygen, etc.), it will affect the electrical properties, such as surface state and short circuit, which will affect the efficiency of amorphous silicon solar cells.

Method used

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  • Passivation encapsulation method for back electrode of solar cell
  • Passivation encapsulation method for back electrode of solar cell
  • Passivation encapsulation method for back electrode of solar cell

Examples

Experimental program
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Embodiment 1

[0035] Aluminum oxide and silicon dioxide thin films are used as passivation encapsulation layers, and are sputtered on the back of the metal interconnection layer 3 by magnetron sputtering. The cell is placed in a chamber of magnetron sputtering, and the target material is an aluminum oxide target. The etched back electrode is sputtered in the chamber to cover and passivate the etched area to form a dense protective layer.

[0036] Alternatively, the aluminum electrodes of the reflective layer and the conductive layer are plated first, and then etched with a laser, and the cell is placed in the magnetron sputtering chamber, and the target material is a silicon dioxide target. It is sputtered to coat and passivate the etched place to form a dense silicon dioxide protective layer.

Embodiment 2

[0038] Aluminum oxide and silicon dioxide thin films are used as passivation encapsulation layers, and are deposited on the back of the metal interconnection layer 3 by using plasma enhanced chemical vapor deposition (PECVD).

[0039] Use PECVD to deposit silicon dioxide process: perform silane (SiH 4 ) and oxygen reaction, the reaction temperature is between 200 and 500°C, and the silicon dioxide film is deposited and grown. This method is simple and can easily deposit a passivation film on the back electrode.

[0040] Use PECVD to deposit aluminum oxide: react organic aluminum source and oxygen on the back of the metal interconnection layer 3 at a reaction temperature of 200-500° C. to deposit and grow aluminum oxide passivation film. The organic aluminum source can be triethylaluminum (Al(CH 2 CH 3 ) 3 ), triisobutylaluminum, etc.

Embodiment 3

[0042] Polyimide is used as a passivation encapsulation layer, and is coated, sprayed, or spin-coated on the back of the metal interconnection layer 3 .

[0043] The polyamic acid solution is coated to form a film, and then cured by heating at a temperature below 300°C to convert the polyamic acid into polyimide. At the same time, it has the advantage of simple process, only two steps are required: apply the coating glue directly on the back of the metal interconnection layer 3, and send it to an oven for heating and curing; no need to add any catalyst, curing agent and other additives.

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Abstract

The invention discloses a passivation packaging method of a back electrode of a solar cell, and the passivation packaging method comprises: step one, a passivation layer is coated on a back electrode layer and the surface of a channel thereof which are etched by laser; step two, an adhesive layer and a substrate are overlapped on the back surface of the passivation layer and laminated together. The passivation packaging method isolates and protects the amorphous silicon solar cell by a passivation film which is arranged at the back surface of the cell and packages insulating materials. The passivation film is not only a barrier of exogenous impurities, but also causes the surface of the device to have good mechanical performance.

Description

technical field [0001] The invention relates to a solar battery packaging method, in particular to a solar battery back electrode passivation packaging method. Background technique [0002] In an amorphous silicon thin film solar cell, after laser etching on a cell single crystal substrate, a large area at the back electrode is in direct contact with the outside world. Therefore, it needs to be protected, that is, packaged. The material in the package is very important for the waterproof, oxygen-resistant, and insulation passivation performance of the device. In addition, due to the difference between the etched surface and the internal structure of the battery (the surface lattice atoms are terminated and there are dangling bonds, that is, unsaturated bonds), the surface and internal properties are different, and its surface condition plays an important role in the performance of the device. As long as there is a small amount of contamination on the surface (such as water ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/20
CPCY02P70/50
Inventor 包健夏芃施松林
Owner 上海拓引数码技术有限公司
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