Spherical parts batch plasma based ion injection method and apparatus thereof
An ion implantation device and plasma technology are applied in ion implantation plating, metal material coating process, coating and other directions, which can solve the problems of uneven implantation and the inability to achieve uniform processing effect of spherical parts, and achieve uniform processing effect, Improve the service life and prevent the effect of arcing
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specific Embodiment approach 1
[0008] Specific implementation mode 1: Combination figure 2 4 illustrates this embodiment, the ion implantation method of this embodiment is completed as follows: a plurality of spherical parts 1 with the same diameter D are placed in the annular groove 3 of the inclined disc 2, the center of the inclined disc 2 The angle α between the axis and the vertical direction is 5°-30°, the rotation of the tilting disc 2 is controlled by the drive motor 11 and the transmission device, and the start and stop of the drive motor 11 and the high-voltage pulse power supply 5 are controlled by synchronous switching Controlled by the device 6, first apply a high-voltage pulse voltage to the spherical part 1, and perform plasma-based ion implantation on the surface of the spherical part 1. After the implantation time is 5-10 minutes, stop applying the high-voltage pulse voltage, and start the drive motor 11 at the same time to tilt the disc The rotation of 2 makes the part of the spherical part 1 ...
specific Embodiment approach 2
[0010] Embodiment 2: This embodiment will be described with reference to FIGS. 3 and 4. The diameter D of the spherical part 1 of this embodiment is 3-50 mm, and the surface ion implantation treatment can be performed on the spherical part 1 of different diameters. The other method steps are the same as in the first embodiment.
specific Embodiment approach 3
[0011] Specific embodiment three: this embodiment is described with reference to Figs. 3 and 4. The angle α between the central axis of the inclined disc 2 and the vertical direction of this embodiment is 5°-30°, which can ensure the surface of the spherical part 1 The ion implantation is uniform and consistent. The other method steps are the same as in the first embodiment.
[0012] Specific implementation manner 4: Combination figure 2 4 illustrates this embodiment. The maximum cross-sectional area of the spherical part 1 placed in the annular groove 3 of the inclined disc 2 in this embodiment accounts for less than 3 / 4 of the bottom area of the annular groove 3 of the inclined disc 2, which is conducive to Uniform ion implantation is performed on the surface of the spherical part 1. The other method steps are the same as in the first embodiment.
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