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Preparation method of strontium bismuth tantalite nanometer line

A strontium bismuth tantalate nanometer and elemental technology, which is applied in chemical instruments and methods, single crystal growth, polycrystalline material growth, etc., can solve problems such as the inability to synthesize strontium bismuth tantalate nanowires, and achieve simple equipment and simple process Effect

Inactive Publication Date: 2008-12-10
HARBIN INST OF TECH
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing strontium bismuth tantalate nanowires in order to solve the problem that the prior art cannot synthesize strontium bismuth tantalate nanowires

Method used

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  • Preparation method of strontium bismuth tantalite nanometer line
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  • Preparation method of strontium bismuth tantalite nanometer line

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specific Embodiment approach 1

[0008] Specific embodiment 1: The preparation method of strontium bismuth tantalate nanowires in this embodiment is realized according to the following steps: 1. Weigh strontium acetate, bismuth subnitrate and tantalum ethoxide, and then stirred on a magnetic stirrer for 18-20 hours to obtain clear, transparent and stable SrBi 2 Ta 2 o 9 Precursor sol; 2. The SBT precursor sol is deposited in the AAO template hole by electrophoretic deposition, and the electrophoretic poles are placed into the SBT precursor sol at room temperature. The distance between the plates is 1cm, and the voltage between the plates is 1 ~20V, continuous treatment for 1~5min; 3. Take out the AAO template for calcination treatment, raise the temperature from room temperature to 450℃ at a rate of 3~5℃ / min, keep it for 1h, and then continue to heat up at a rate of 5~10℃ / min To 700°C, keep warm for 0.5h, and then cool to 180°C with the furnace; 4. Put the calcined product into NaOH solution with a molar co...

specific Embodiment approach 2

[0013] Specific embodiment two: the difference between this embodiment and specific embodiment one is that the stirring time in step one is 19h. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0014] Embodiment 3: This embodiment is different from Embodiment 1 in that the voltage between the plates in step 2 is 2-15V. Other steps and parameters are the same as those in Embodiment 1.

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Abstract

The invention provides a method for preparing a strontium bismuth tantalum nanowire, relating to a nanowire preparation method. The method solves the problem that the strontium bismuth tantalum nanowire can not be prepared by the prior art. The preparation method comprises the following steps that: 1. strontium acetate, bismuth subnitrate and tantalum ethoxide are weighed to prepare an SBT precursor sol; 2. the electrophoretic deposition is performed; 3. the calcination process is performed; and 4. the nanowire with a template is put in a sodium hydrate solution so that the strontium bismuth tantalum nanowire is prepared. The method realizes the synthesis of the strontium bismuth tantalum nanowire by adopting the method of electrophoretic deposition through the SBT sol. The method is simple, has simple devices and can accurately control the length of the nanowire.

Description

technical field [0001] The invention relates to a preparation method of nanowires. Background technique [0002] From the discovery of SrBi by Aurivillius 2 Ta 2 o 9 Since SBT has superior fatigue resistance and small coercive electric field, it has become the material of choice for non-volatile memory. At present, the research on SBT mainly focuses on the preparation and performance research of nano-films. Nanotubes and nanowires have a larger specific surface area than nanofilms, so they have higher adsorption capacity and can improve various properties of materials, such as ferroelectric properties, photoelectric properties, magnetic properties, etc., and have become the research focus of current researchers. hotspot. But SrBi 2 Ta 2 o 9 As a compound of quaternary system, its molecular structure is extremely complex, and there is no report on the synthesis of strontium bismuth tantalate nanowires. Contents of the invention [0003] The purpose of the present i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/30C30B29/62
Inventor 王文夏瑞临冯明冯金彪柯华贾德昌周玉
Owner HARBIN INST OF TECH
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