Resistor memory with doping control layer

Abstract

The invention belongs to the micro-electron technical field, in particular to a resistance memory with a doped control layer. The resistance memory comprises an upper electrode, a lower electrode, a resistance memory medium layer used for realizing the memory conversion of the resistance value, and a doped control layer used for realizing the metal element doping of the resistance memory medium layer and controlling of the doping content. The doped control layer and the resistance memory medium layer are directly connected with each other and the metal element in the upper electrode or the lower electrode penetrates through the doped control layer to diffuse towards the surface of the memory medium layer so as to realize the controllable low doping of the resistance memory medium layer, thus achieving the object of stabilizing the electric performance of the resistance memory.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a resistance memory with a doping control layer. Background technique [0002] Memory occupies an important position in the semiconductor market. Due to the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing, and more than 90% of the share is occupied by FLASH. However, due to crosstalk (CROSS TALK), the tunneling layer cannot be thinned unlimitedly with the development of technology generations, and the bottleneck of FLASH development such as integration with embedded systems, people are forced to look for a new type of non-volatile memory with better performance. Recently, Resistive Random Access Memory (RRAM) has attracted high attention because of its high density, low cost, and strong ability to evolve with technology. The main materials used are phase change material...

AI Technical Summary

Problems solved by technology

The current doping method is to directly contact the doped metal with the storage medium to achieve diffusion doping [1][3] , so the doping method is difficult to control the doping amount, and it is not suitable for metal oxide resistance memory films that only need low doping, for example, Cu x Doping a small amount of Ta on the surface of the O resistance storage layer can improve the power consumption of the device and stabilize the performance of the device, but Ta and Cu x The direct contact of O film with doping will make the Cu x Excessive Ta content in O leads to loss of device switching performance

Images