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Alkaline barrier polishing slurry

A slurry, tantalum blocking technology, applied in polishing compositions, polishing compositions containing abrasives, other chemical processes, etc., can solve the problem of high degree of defects

Inactive Publication Date: 2008-11-12
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, these slurries are too defective for some applications

Method used

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  • Alkaline barrier polishing slurry
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  • Alkaline barrier polishing slurry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The polishing test used Coral from Novellus Systems, Inc. TM Carbon doped oxide (CDO) 200mm sheet wafer, TEOS dielectric, tantalum nitride and electroplated copper. By using IC1010 from Rohm and Haas Electronic Materials CMP Technology TM And embossed Politex TM The polishing pad polishes the wafer to obtain topography data.

[0035] Use MIRRA TM The rotary polishing table polishes the sheet wafer. The first step of copper polishing uses Eternal slurry EPL2360 and IC1010 TM Round grooved polyurethane polishing pad, using KinikAD3CG-181060 grid diamond polishing disc, polishing on platen 1 and 2. The polishing conditions of platen 1 are: platen speed is 93rpm, support speed is 21rpm, downward force is 4psi (27.6kPa), platen 2 speed is 33rpm, support speed is 61rpm, downward force is 3psi (20.7kPa) ). The polishing conditions of the platen 3 are: the downward force is 1.5 psi (10.3 kPa), the platen rotation speed is 93 rpm, and the support rotation speed is 87 rpm. The slurry...

Embodiment 2

[0041] For the purpose of illustrating the effect of polyvinylpyrrolidone on low-k dielectrics (such as carbon-doped oxides), Table 3 shows the slurry of Table 1 polished under the conditions of Example 1.

[0042] table 3

[0043]

[0044] PVP=Polyvinylpyrrolidone

[0045] Table 3 shows that polyvinylpyrrolidone reduces the removal rate of carbon-doped oxides without negatively affecting the removal rate of TaN, TEOS, or copper.

Embodiment 3

[0047] For the purpose of illustrating the effect of benzotriazole on the copper removal rate, Table 4 shows the polishing slurry in Table 1 under the conditions of Example 1.

[0048] Table 4

[0049]

[0050] BTA = benzotriazole

[0051] Table 4 shows that benzotriazole reduces the copper removal rate without negatively affecting the removal rate of carbon-doped oxides or TEOS.

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Abstract

The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having a tantalum-containing barrier layer and copper interconnects. The slurry includes by weight percent, 0 to 5 oxidizing agent, 0.1 to 25 silica particles, 0.001 to 3 polyvinyl pyrrolidone, 0.02 to 5 weight percent imine barrier removal agent selected from at least one of formamidine, formamidine salts, formamidine derivatives, guanidine, guanidine derivatives, guanidine salts and a mixture thereof, 0.02 to 5 weight percent carbonate, 0.01 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 10 complexing agent and balance water; and the aqueous slurry having a pH of 9 to 11.

Description

Technical field [0001] The present invention relates to an alkaline barrier layer polishing slurry. Background technique [0002] With the development of ultra-large-scale integrated circuit (ULSI) technology toward smaller line widths, new challenges are presented to the conventional chemical mechanical polishing (CMP) method. In addition, to introduce low-k and ultra-low-k dielectric films, a gentler CMP process is required, because the film has low mechanical strength and poor adhesion to adjacent layers. For example, porous carbon-doped oxide (CDO) exhibits weakened mechanical strength and reduced heat capacity, which poses significant challenges to ensuring the implementation of process steps. Specifically, people are particularly concerned about the control of delamination, scratches, and rate uniformity. In addition, increasingly stringent standards for morphology, uniformity, and defectivity place more demands on polishing slurries for low-k films. [0003] The integratio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/18C09G1/02H01L21/304
CPCC09G1/02C09K3/1463H01L21/3212
Inventor T·托马斯叶倩萩
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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