Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Apparatus and method of polymer photoresist ultrasonic ageing effect

A technology of ultrasonic aging and photoresist, which is applied in photosensitive material processing, electrical components, semiconductor/solid-state device manufacturing, etc., to achieve the effects of reducing research and development costs, avoiding substrate bending, and reducing internal stress

Inactive Publication Date: 2008-10-01
DALIAN UNIV OF TECH
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention proposes to solve the high stress problem of polymer photoresist with the ultrasonic aging technology currently applied in the field of stress relief of metal materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method of polymer photoresist ultrasonic ageing effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0012] To carry out ultrasonic aging by using the invention, firstly, a photoresist microstructure is made on a silicon wafer. The fabrication process of the photoresist microstructure includes silicon wafer cleaning, gluing, pre-baking, exposure, post-baking, and development.

[0013] Firstly, the silicon wafer is cleaned, using the standard process of cleaning silicon wafers in the laboratory, successively boil the silicon wafer with concentrated sulfuric acid, No. 1 cleaning solution, and No. 2 cleaning solution, then rinse it with deionized water, and finally put it in an oven for drying. After drying, make a photoresist layer, spin SU-8 photoresist by spin coating, put it on a hot plate for drying, then expose it to ultraviolet light, and then put it on a hot plate and dry it to make the SU-8 glue cross-linked .

[0014] Since the stress of the photoresist structure mainly occurs during the post-baking process, the adhesive layer is subjected to ultrasonic aging after th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a device and method of polymer photoresist ultrasound aging, belonging to ultrasonic application field, characterized in that the polymer photoresist ultrasound aging device includes an ultrasonic generator, an ultrasonic transducer, a worktable and a casing, the characteristics is that the worktable is connected with the ultrasonic transducer, the casing supports the worktable which is suspended with the transducer. The method of the polymer photoresist ultrasound aging is characterized in that the silicon is cleaned in the standard process, coated with the photoresist after dried, exposing under the uv, ensuring SU-8 adhesive crosslink after dried; the adhesive layer is processed with an ultrasound aging: the ultrasonic generator transmits a high frequency electrical signal to drive the ultrasonic transducer vibrate and transmitting to the worktable. The invention has effects and advantages of effectively reducing the internal stress of the polymer photoresist layer, avoiding phenomena of baseboard bend, stress concentration, sticking affecting the size precision and the structure of the adhesive layer, ensuring the process parameter have more elasticity, providing conditions in order to obtaining more effective, more diversified parameter combination, reducing the research and development costs.

Description

technical field [0001] The invention belongs to the technical field of ultrasonic application, and relates to an ultrasonic aging device and method for polymer photoresist. Background technique [0002] Polymer SU-8 photoresist has been more and more widely used because of its low cost and high aspect ratio structure in the application of UV-LIGA technology. At present, the problem of high stress is one of the problems to be solved urgently for SU-8 glue applied in UV-LIGA technology. In recent years, MEMS researchers have done some research work on improving the internal stress of the adhesive layer. The magazine "Journal of Functional Materials and Devices", No. 2, 2005, pages 251-254, proposed that reducing the post-baking temperature (to 85°C) and heating rate (1°C / min) can significantly eliminate the influence of stress concentration; Optical Precision Engineering, 2007 Volume 15, Issue 9, pages 1377-1382 conducted simulation research and quantitative comparison of in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/26G03F7/40
Inventor 杜立群喻立川王煜郭照沛
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products