Low dielectric constant composite and preparation method thereof

Abstract

The invention discloses a composite material with low dielectric constant and a process for preparation. The composite material with low dielectric constant includes benzocyclobutene and hollow inorganic nano-particles or includes benzocyclobutene derivative and hollow inorganic nano-particles. The process for preparation comprises adding benzocyclobutene and hollow inorganic nano-particles in a solvent, or adding benzocyclobutene derivative and hollow inorganic nano-particles to the solvent, mixing evenly to prepare spin coating liquid, forming films on a substrate by employing whirl coating method, positioning the prepared substrate in a tumbler with a stopper, then evacuating, inputting nitrogen, removing oxygen and remaining solvent in the system, keeping the temperature between 70 DEG C and 100 DEG C for 20-80 minutes, then increasing the temperature to 190-350 DEG C and keeping for 40-120 minutes, lowering the temperature and obtaining composite material with low dielectric constant. The prepared composite material has the advantages of low dielectric constant, high heat stability, high chemical stability, simple preparation and the like.

Description

technical field [0001] The invention relates to a low dielectric constant composite material and a preparation method thereof, in particular to a low dielectric constant composite material composed of benzocyclobutene and its derivatives-hollow nanometer microspheres and a preparation method thereof. technical background [0002] In the rapidly developing microelectronics industry, high-speed, high-density, multi-functional high-performance ultra-large-scale integrated circuits (ULSI), such as dynamic random access memory chips (DRAM), microprocessors (MPU), application-specific integrated circuits (ASIC) The use of etc., its small feature size and large chip area lead to increased wiring density. When the feature size of the device is gradually reduced, the number of multi-layer wiring and logic interconnection layers increases, which increases the resistance of the wires and the capacitance between wires and layers. , RC delay increases, resulting in a series of problems s...

AI Technical Summary

Problems solved by technology

Some of these polymers have a low dielectric constant (around 2.65), but this value cannot meet the needs of the modern microelectronics industry, and its thermal stability and mechanical properties are not very satisfactory

[0005] Porous materials can greatly reduce the dielectric constant and loss by reducing the density of polarized molecules (research shows that the dielectric constant of non-porous bulk materials is difficult to reach below 2.0), but generally porous materials have poor thermal conductivity, generally only SiO 2 Tens of a tenth of that, it will cause the temperature of the interconnection system in the circuit to rise, the volume will expand, and even the dielectric layer will be damaged; at the same time, the structure of ordinary porous materials is loose and the mechanical properties are poor.

And because it is porous, it is easier to absorb water, which is extremely unfavorable for the material used as the medium layer.

L.Wang disclosed a method for preparing a mechanically reinforced highly porous low dielectric constant film (see Chinese patent CN 1502123A, publication date: June 2, 2004). Although the mechanical properties of the material have been strengthened, it has not overcome Disadvantages of material volume expansion and porous materials are easy to absorb water