Method for promoting electrostatic charge dissipation on semiconductor chip

Abstract

The invention provides a method for accelerating the dissipation of electrostatic charge on a semi-conductor chip, which in details is that: When the semi-conductor chip is released from the double-pole electrostatic chuck, negative electric potential is applied at the two poles of the double-pole electrostatic chuck so as to accelerate the dissipation of the additional electrostatic charge on the semi-conductor chip. With the implementation of the technical proposal, the dissipation of the additional electrostatic charge on the semi-conductor chip can be accelerated notably, which reduces the dissipation time of the electrostatic charge and thus the release time of the semi-conductor chip as well and improves the production rate. In addition, the invention is easy to operate and strong in reliability without addition of any mechanical structure.

Description

technical field [0001] The invention relates to the field of semiconductor wafer production, in particular to a method for promoting the dissipation of electrostatic charge on the semiconductor wafer. Background technique [0002] At present, with the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires enterprises that produce integrated circuits to continuously improve the processing capacity of semiconductor wafers. Plasma devices are widely used in fabrication processes for fabricating integrated circuits (ICs) or MEMS devices. Among them, inductively coupled plasma (ICP) is widely used in etching and other processes. Under low pressure, the reactive gas is excited by radio frequency power to generate ionization to form a plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active reactive group...

AI Technical Summary

Problems solved by technology

This method only delays waiting while maintaining the plasma, and the release time is longer, which reduces the productivity, and the existence of the plasma for too long may cause secondary damage to the wafer surface that has completed the process

[0008] And if the electrostatic charge on the semiconductor wafer is not completely dissipated, the operation may occur, the wafer may jump or shift when the thimble is raised, resulting in the failure to take out the wafer smoothly, and it may even damage the thimble and the manipulator.

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