Controllable terahertz wave attenuator device and its method
A terahertz wave and attenuator technology, applied in the field of terahertz wave applications, can solve the problems of few reports on terahertz wave attenuator research, complex device structure, high price, etc., to achieve compact structure, flat attenuation spectrum, cost low effect
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[0019] Terahertz wave attenuation at 0.3THz frequency:
[0020] Choose the BWOs sold by Microtech, where the return wave tube model is selected as QS-400 ov30 (the frequency is tunable in the 0.23-0.375THz frequency band), and the computer controls the BWO output wave to change in the 0.23-0.375THz frequency band. The designed high-resistance silicon thickness is h=430μm, the radius of the high-resistance silicon wafer is r=20mm, the resistivity of the high-resistance silicon is 10000Ωcm, the working wavelength of the argon ion laser is 514.5nm, and the power is 2W. The output frequency of BWO and the sample two-dimensional moving platform are simultaneously controlled by the computer, so that the terahertz wave of the corresponding frequency is focused on the preset middle position of high-resistance silicon. When the obtained argon ion laser is not applied, the transmittance of the terahertz wave passing through the terahertz wave attenuator is shown in Fig. Figure 2(b). T...
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