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Making method for niobium-magnesium acid lead-Ti acid lead iron electric thin film with self-polarization effect

A technology of lead magnesium niobate and ferroelectric thin film, applied in the field of preparation of lead magnesium niobate-lead titanate relaxor ferroelectric thin film material, can solve the problem that the self-polarization effect is not strong enough, the pyroelectric effect needs to be improved, etc. problem, to achieve the effect of high self-heating discharge coefficient, low cost and low dielectric loss

Active Publication Date: 2008-04-30
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the self-polarization effect shown by these films is not strong enough, and the spontaneous pyroelectric effect needs to be improved, and there is still a certain distance from the requirements of the focal plane array.

Method used

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  • Making method for niobium-magnesium acid lead-Ti acid lead iron electric thin film with self-polarization effect
  • Making method for niobium-magnesium acid lead-Ti acid lead iron electric thin film with self-polarization effect

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Embodiment Construction

[0024] The present invention is described in detail below by preferred embodiment and accompanying drawing

[0025] 0.7Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -0.3PbTiO 3 Preparation of precursor solution with stoichiometric ratio

[0026] Weigh 0.0106 moles of lead acetate and 0.00233 moles of magnesium acetate in a 100ml flask, add 60ml of ethylene glycol methyl ether, and then heat at 100°C to dissolve them. Partial fractions were distilled off at 125°C. After cooling to room temperature, 0.003 mol of titanium n-butoxide, 0.00466 mol of niobium ethoxide and 0.6 ml of acetylacetone were added. Reflux at 100°C for 1 hour. Finally, the obtained precursor solution was filtered through a 0.2 μm microporous filter, and its concentration was adjusted to 0.3 M by evaporating part of the solvent.

[0027] Thin film preparation and crystallization

[0028] The thin film adopts the spin-coating method. Take about 0.5ml of the precursor solution with a rubber dropper and drop it on the rotating ...

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Abstract

The invention discloses a method of preparing a lead magnesio-niobate (PMN)-lead titanate (PZT) ferroelectric film with self-polarizing effect. The method adopts the chemical solution deposition method and comprises the steps of: preparing solution consisting of lead acetate, magnesium acetate, niobium alcoholate, normal butanol titanium, ethylene glycol monomethyl ether and acetylacetone to 0.1-0.3M precursor solution; adopting the rotary filming mode to obtain a gel film and performing heat treatment in subsection in short annealing and forming film material; repeating the course until obtaining the film material with ideal thickness. The invention has the advantages of simple and convenient process operation, lower cost, and large area even film preparation. The pyroelectricity coefficient of the film obtained by the invention on LaNiO3 / Pt / Ti / SiO2 / Si chip can reach 1.6 multiplies by 10 <-8> Ccm <-2>K<-1> with no deflecting field applied by test.

Description

technical field [0001] The invention relates to a ferroelectric thin film material, in particular to a preparation method of a lead magnesium niobate-lead titanate relaxation ferroelectric thin film material with self-polarization effect. Background technique [0002] Since the monolithic integrated ferroelectric thin film detector has higher detection rate and lower thermal crosstalk than the hybrid ferroelectric ceramic detector, it has caused extensive and in-depth research on this detector in the world. In 2001, Raytheon-TI Systems successfully prepared a monolithic integrated 320×240 focal plane detector based on lead zirconate titanate (PZT) film, and realized room temperature imaging [Hanson et al., Proceedings of SPIEvol.4288(2001), p298]. However, so far, no commercial ferroelectric thin-film focal plane arrays have appeared. What is the reason? The main reason is that the uniformity and stability of the ferroelectric thin film focal plane array device have not b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L37/02G01J5/12H10N15/10
Inventor 褚君浩孟祥建林铁石富文孙璟兰马建华韩莉
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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