Low noise thin type photoelectric sensor and manufacturing method therefor

Abstract

The invention provides a low-noise light-thin photoelectric sensor, comprising a photoelectric sensing base and a transparent base, wherein the photoelectric sensing base comprises a photoelectric converter area, an electrode welding pad which can be used as external electrode connector or an external electrode joint wedge through the photoelectric sensing base, a peripheral circuit surrounding the photoelectric converter area, which is electrically connected with the photoelectric converter area, the electrode welding pad and / or joint wedge on the photoelectric sensing base, or further to be used as the output, input, signal amplification of photoelectric signal, and the decode of pixel address of the photoelectric converter. The transparent base comprises a groove relative to the electrode welding pad, via bonding art to be directly jointed with the transparent base and the base of the photoelectric sensor. The invention has easy assembly, which can support batch production of one integrated chip or at least part of chips of one photoelectric sensor, to simplify the production and reduce production cost. The invention also provides the production method and relative photoelectric sensing modules of photoelectric sensor.

Description

technical field [0001] The invention relates to a photoelectric sensing device, in particular to a low-noise thin photoelectric sensing device. Background technique [0002] In recent years, with the rapid development of the electronic industry, the rapid reduction of the life cycle of various electronic products, and the trend of electronic products towards miniaturization, thinning, and integration of multiple functions, various personal mobile electronic devices are generally equipped with Multimedia photoelectric sensing device modules, other security monitoring systems, medical testing equipment and other thermal imaging systems all have a strong demand for photoelectric sensing devices. [0003] At present, the general photoelectric sensing device is attached to the chip carrier of the ceramic or plastic package, and the electrode pad of the photoelectric sensing device is electrically connected to the internal pins in the package or the circuit board base system by wi...

AI Technical Summary

Problems solved by technology

[0010] The main disadvantage of the above-mentioned traditional photoelectric sensing device is that the photoelectric sensing device itself does not have the effect of electromagnetic shielding, or requires an additional packaging and manufacturing process for an additional electromagnetic shielding layer, so the volume and weight of the photoelectric sensing device or module are reduced. It is difficult to shrink further, and it will also increase the overall manufacturing cost and production time

In addition, before the assembly of the general photoelectric sensing device is completed and before the manufacturing process of the transparent sheet packaging, the photoelectric sensing device will be faced with poor storage environment or long storage time, which may affect the production yield and reliability of the product in the future. And other issues

At the same time, the photoelectric sensing device needs to be cut and separated into individual photoelectric sensing dies from the whole wafer in advance before the individual packaging and assembly manufacturing process can be carried out. However, when the wafer is cut and split, it is easy to produce silicon particles, and The silicon particles have the risk of contaminating and scratching the optical conversion area of ​​the photoelectric sensing device, thereby damaging or destroying the photoelectric sensing device, and affecting the quality and packaging yield of the overall photoelectric sensing device

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