Tensile and compressive stressed materials for semiconductors

Abstract

A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.

Description

technical field [0001] The present invention relates generally to semiconductor technology, and more specifically to a method of depositing a stressed material on a substrate. Background technique [0002] During the fabrication of substrates for circuits and displays, the substrates are typically exposed to high energy process gases capable of depositing or etching materials on the substrates. In a chemical vapor deposition (CVD) process, a process gas energized by high-frequency voltage or microwave energy is used to deposit material on a substrate, which can be a layer, plug of a contact hole, or Other selective deposition structures. The subsequent layer can be etched or otherwise processed to form active and passive devices on the substrate, such as metal oxide semiconductor field effect transistors (MOSFETs) and other devices. A MOSFET typically has a source region, a drain region, and a channel region between the source and drain. In a MOSFET device, a gate electro...

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A reduction in supply voltage allows lower operating power levels, but such reductions are also limited by transistor threshold voltages

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