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Tin sulfide film solar battery

A thin-film solar cell and sulfide technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of less research on thin-film preparation, and achieve the effect of large-area continuous production, wide sources, and reduced energy consumption.

Inactive Publication Date: 2010-02-03
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are many researches related to the preparation of SnS thin films, including chemical bath deposition method, electrochemical deposition method, evaporation method, chemical vapor deposition method, spray pyrolysis method, solution immersion reaction method, tin film vulcanization method and other methods. SnS 2 There are few studies on thin film preparation

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0017] 1. Preparation of SnS on conductive glass / metal grid electrode by spraying method 2 thin film, the SnS 2 It is prepared by the reaction of crystalline tin tetrachloride and ammonium sulfide; use the same method on conductive glass / metal gate electrode / SnS 2 A SnS film is prepared on the film, the SnS is prepared by reacting stannous chloride and ammonium sulfide, and a metal back electrode is prepared by thermal evaporation or electron beam vapor deposition.

[0018] 2. Preparation of SnS on conductive glass / metal grid electrodes by dipping method 2 composite film, the SnS 2 The composite is prepared by reacting ammonium sulfide with the substance ratio of crystalline tin tetrachloride and cupric chloride in a ratio of 1:0.02, and using the same method on conductive glass / metal grid electrode / SnS 2 A SnS composite film is prepared on the composite film, and the SnS composite is prepared by reacting ammonium sulfide with the mass ratio of tin protochloride and crystal...

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PUM

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Abstract

A tin sulfide thin film solar cell comprises a conductive glass / metal gate electrode and a metal back electrode and is characterized in that uni-junction or multi-junction n-SnS2 or the composite thinfilm thereof and p-SnS or the composite thin film thereof are formed between the conductive glass / metal gate electrode and the metal back contact. The composite means the tin sulfide obtained by doping tin bromide (n-SnS2) and stannous sulfide (p-SnS). The solar cell is rich in material sources, safe and environment-friendly, convenient in processing and effectively solves the collection problemof current carriers with the aid of such electrodes as metallic tin by using SnS2 and SnS, which have the same components and different conduction types and liable to realize energy gap match, heterojunction transition and good transport property of the current carriers.

Description

1. Technical field [0001] The invention relates to a compound thin film solar cell, specifically a tin sulfide thin film solar cell. 2. Background technology [0002] Energy crisis and environmental pollution are major challenges facing human beings. Fully developing and utilizing solar energy has become a strategic decision for sustainable energy development of governments around the world. The development of cost-effective solar photovoltaic cells and their utilization technologies is a priority direction for the low-cost and large-scale development and utilization of renewable energy. Research on solar cell-related materials and their key technologies is an important part of high-efficiency energy materials technology. Therefore, the research and use of solar cells to directly convert solar energy into electrical energy and realize photovoltaic grid-connected power generation will change the traditional energy structure, alleviate human energy shortages in the future, and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/06H01L31/032H01L31/068
CPCY02E10/50H01L31/02245Y02E10/547
Inventor 史成武李兵梁齐吴玉程王岩
Owner HEFEI UNIV OF TECH
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