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Wafer linking boride surface treating pigment as well as linking method

A surface treatment agent and wafer bonding technology, which is applied in the field of surface treatment agent for wafer bonding and boride surface treatment agent for wafer bonding. and other problems, to achieve the effect of high-strength bonding, short annealing time, and low bonding temperature

Inactive Publication Date: 2010-02-03
BEIJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its long and complicated process will increase the processing cost, and the long-term annealing process will also cause a decline in crystal quality; at the same time, the public document does not indicate how high the final annealing temperature is, and it is impossible to judge whether the process is a low-temperature bond. combine

Method used

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  • Wafer linking boride surface treating pigment as well as linking method
  • Wafer linking boride surface treating pigment as well as linking method
  • Wafer linking boride surface treating pigment as well as linking method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1 (GaAs / InP bonding):

[0032] Clean the InP wafer and GaAs wafer to be bonded in acetone, ethanol, ammonia water and deionized water to remove surface stains;

[0033] Boric acid (H 3 BO 3 ) dissolved in ammonia (NH 4 OH), made into a saturated solution at room temperature, as a surface treatment agent;

[0034] Place the cleaned wafer in a surface treatment agent and place it at 99°C for 1 minute;

[0035] Take out the two wafers face to face, and clamp them with a clamp;

[0036]Put the clamped wafer and the clamp together into an annealing furnace for heat treatment, and keep it at a heat treatment temperature of 295°C for 0.5 hours to achieve high-strength bonding between the wafers.

Embodiment 2

[0037] Embodiment 2 (Si / InP bonding):

[0038] Clean the InP wafer to be bonded in acetone, ethanol, ammonia water and deionized water to remove surface stains;

[0039] Form an extremely thin layer of silicon oxide (about 10 nanometers thick) on the surface of the Si wafer to be bonded;

[0040] Si wafer with H 2 SO 4 :H 2 o 2 and HCl:H 2 o 2 :H 2 O solution cleaning to remove surface stains;

[0041] With 1% sodium borohydride (NaBH 4 ) aqueous solution, take 3ml of this solution (No. 1 solution); get 0.5ml of ammonia water (No. 2 solution); mix 1% boric acid (H 3 BO 3 ) aqueous solution, take 25ml of this solution (No. 3 solution); mix No. 1, 2, and 3 solutions to prepare a surface treatment agent;

[0042] Place the cleaned wafer in a surface treatment agent and place it at 60°C for 10 minutes;

[0043] Take out the two wafers face to face, and clamp them with a clamp;

[0044] Put the clamped wafer and the clamp together into an annealing furnace for heat tre...

Embodiment 3

[0045] Example 3 (Si / Si bonding):

[0046] Form a thin layer of silicon oxide (about 5 nanometers thick) on the surface of the Si wafer to be bonded;

[0047] Si wafer with H 2 SO 4 :H 2 o 2 and HCl:H 2 o 2 :H 2 O solution cleaning to remove surface stains;

[0048] Take 0.1g of sodium borohydride (NaBH 4 ) and 50ml of ammonium borate aqueous solution are mixed and prepared as a surface treatment agent;

[0049] Place the cleaned wafer in a surface treatment agent and place it at room temperature for 30 minutes;

[0050] Take out the two wafers face to face, and clamp them with a clamp;

[0051] Put the clamped wafer and the clamp together into an annealing furnace for heat treatment, the heat treatment temperature is 180°C, and the treatment time is 1.0 hour, so as to realize high-strength bonding between the wafers.

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PUM

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Abstract

The invention discloses a surface processing agent for wafer bonded boride and a bonding method. The provided surface processing agent is a boride solution which contains borate ion, borohydride ion or mixture of borate ion and borohydride ion. The solvent is selected form carbon sulfide, carbon tetrachloride, methanol, ethanol, ammonia and water, and concentration of the solution is 0.001%-20%. The wafer bonding method includes steps: cleaning the wafers which is to be bonded, placing the wafers into the surface processing agent for 1 min to 1 hour in water bath with 0-100 DEG C, taking out two face to face stuck wafers, carrying heat treatment for the clamped wafers and clamp in annealing furnace for 0.5-2 hours under 100-300 DEG C. The bonding method is environmental friendly and nontoxic, and realizes high quality bonding for the semiconductor wafer under lower heat treatment temperature.

Description

Technical field: [0001] The invention relates to a wafer bonding process, in particular to a boride surface treatment agent for wafer bonding and a wafer bonding method using the surface treatment agent. Background technique: [0002] With the rapid development of optoelectronic integration technology, due to different materials (such as gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN) and silicon (Si), etc.) The characteristics and other aspects have their own advantages, and the integration of different materials will greatly improve the function and integration of optoelectronic devices. However, for two materials with large differences in lattice constants, the current epitaxial growth process is still difficult to achieve high-quality integration between the two, that is, heterogeneous growth. Thus, a new technology - wafer bonding technology (Wafer bonding) was born. [0003] Wafer bonding technology refers to two wafers with flat surfaces, afte...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/02H01L21/30H01L21/18
Inventor 任晓敏黄辉王文娟宋海兰王琦黄永清
Owner BEIJING UNIV OF POSTS & TELECOMM
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