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Diamond multi-layer film structure surface acoustic wave device and its manufacture method

A surface acoustic wave device and multi-layer film technology, which is applied in the direction of electrical components, impedance networks, etc., can solve problems such as the inability to perform energy conversion between electromagnetic waves and surface acoustic waves

Inactive Publication Date: 2009-10-28
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] However, diamond itself is not a piezoelectric material and cannot perform energy conversion between electromagnetic waves and surface acoustic waves. Therefore, it is necessary to deposit a piezoelectric film (such as ZnO, LiNbO, etc.) on it. 3 , AlN, etc.), made of multilayer film SAW devices

Method used

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preparation example Construction

[0018] Preparation method of the present invention divides following steps:

[0019] 1. Using the microwave plasma CVD method, on the "mirror surface" silicon, use the microcomputer program to control the deposition parameters, and continuously deposit the nano-diamond film step by step. The specific steps are as follows:

[0020] ① Utilize Z L 02141713X "seedless and unbiased diamond film deposition method", first deposit a very thin diamond-like film transition layer on the surface of the high-resistance "mirror" silicon substrate; the gas mixture ratio is 86% (Ar): 10% (H 2 ): 4% (CH 4 ); microwave power 5000W, gas mixture flow rate 600sccm, substrate temperature 700°C. Deposit for 10 minutes (film thickness is about 0.4-0.5 μm);

[0021] ②High-density nucleation on the surface of diamond-like carbon film: the mixture gas ratio is controlled and adjusted by a microcomputer program, and the mixture gas ratio slowly becomes 50% (Ar): 47% (H 2 ): 3% (CH 4 ), and slowly ch...

example 1

[0034] 1. First prepare the nano-diamond film whose surface is terminated by hydrogen:

[0035] Using the microwave plasma CVD method, on the "mirror surface" silicon, using the microcomputer program to control the deposition parameters, the nano-diamond film is deposited step by step and continuously. The specific steps are as follows:

[0036] ① Utilize Z L 02141713X "seedless and unbiased diamond film deposition method", first deposit a very thin diamond-like film transition layer on the surface of the high-resistance "mirror" silicon substrate; the gas mixture ratio is 86% (Ar): 10% (H 2 ): 4% (CH 4 ); microwave power 5000W, gas mixture flow rate 600sccm, substrate temperature 700°C. Deposit for 10 minutes (film thickness is about 0.4-0.5 μm);

[0037] ②High-density nucleation on the surface of diamond-like carbon film: the mixture gas ratio is controlled and adjusted by a microcomputer program, and the mixture gas ratio slowly becomes 50% (Ar): 47% (H 2 ): 3% (CH 4 )...

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Abstract

The invention discloses an IDT / h-BN / c-BN / diamond multilayer film structure surface acoustic wave device and a preparation method. The multilayer film structure surface acoustic wave device: a nano-diamond film prepared on mirror silicon The bottom layer, the nano-c-BN film intermediate layer prepared on the nano-diamond film bottom layer, the nano-h-BN film with high C-axis preferred orientation prepared on the nano-c-BN film intermediate layer, and the preparation on the surface of the nano-h-BN film Interdigital transducer IDT, composed of IDT / h-BN / c-BN / diamond multilayer film structure surface acoustic wave device. The thin film structure prepared by the invention can meet the application requirements in the fields of surface acoustic wave (SAW) devices with high frequency (above 2.5 GHz), high electromechanical coupling coefficient, high power (above 8 W), small propagation loss, and low frequency temperature coefficient.

Description

【Technical field】 [0001] The invention relates to a surface acoustic wave device, in particular to an IDT / h-BN / c-BN / diamond multilayer film structural acoustic Surface wave device and its fabrication method. 【Background technique】 [0002] In recent years, the rapid development of mobile communication has made the radio communication frequency band a limited and precious natural resource. The mobile communication system, in the third generation digital system, the global roaming frequency range is 1.8-2.2GHz, and the satellite positioning system (GPS) 1.575 GHz; low-earth orbit new satellite communication (LEO) application frequency from 1.6GHz to 2.5GHz, urgently needs high-frequency surface acoustic wave (SAW) filter. High-frequency SAW filters are also used in intermediate frequency (IF) filtering in high-frequency systems (eg, high bit-rate wireless LANs). In addition, high-speed digital optical fiber transmission technology develops rapidly, and the capacity of optica...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/145H03H3/08
Inventor 杨保和熊瑛薛玉明陈希明吴晓国
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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