A transmission electron microscope measurement support grid based on phase change materials

Abstract

The invention relates to a transmission electron microscope sample loading net, which pertains to the measurement field of nano-materials. The invention includes a support part and a circuit part, the support part includes a metal ring (1), the circuit part includes two electrodes (2), an element which is ready to be measured and a phase change material amorphous thin film (5), the electrodes (2) are insulatedly bonded with the metal ring (1), the phase change material amorphous thin film (5) is evenly distributed between the two electrodes (2), the phase change material thin film (5) is amorphous, the element which is ready to be measured is positioned in the phase change material amorphous thin film (5) or is integrated on one electrode (2). The connection lines in the invention are characterized by erasable property, the higher voltage is added on the both ends of the electrodes, or the loading net is directly done with certain laser pulse irradiation, so the phase change material thin film is completely amorphous, the formed current path disappears, the optional and repeated erasable properties of the measurement circuit are realized.

Description

technical field [0001] The invention relates to a transmission electron microscope sample carrying net, which belongs to the field of nanometer material measurement. Background technique [0002] Transmission electron microscope (hereinafter referred to as transmission electron microscope or electron microscope) is a modern large-scale instrument and a powerful tool for studying the microstructure of matter. It has a wide range of applications in physics, chemistry, material science, life science and other fields, especially the rapidly developing In the field of nano science and technology, it is one of the most powerful research tools. At present, the resolution of the transmission electron microscope has reached 0.2nm, which is close to the atomic distance of solid matter. With the development of microelectromechanical systems (MEMS, micro electromechanical system) and nanoelectromechanical systems (NEMS, nanoelectromechanical system), it is particularly urgent to study t...

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Problems solved by technology

With the development of microelectromechanical systems (MEMS, micro electromechanical system) and nanoelectromechanical systems (NEMS, nanoelectromechanical system), it is particularly urgent to study the electrical properties of single nanowires or nanoscale microdevices under the action of an electric field, but Due to the small structure of a single nanowire or micro-device, it is difficult to manipulate, how to fix and apply an electric field to a single nanowire or micro-device sample in a transmission electron microscope, to reveal the electrical properties of nanomaterials under the action of an external electric field from the nanoscale and atomic level performance, and the electric field effect becomes a difficult problem for researchers

At present, due to the extremely limited space between the sample stage and the pole piece in the transmission electron microscope, generally 1-3mm, it is very difficult to directly measure the mechanical properties of a single nanowire or nanofilm at atomic scale resolution. The method of electrical measurement of nanowires that has been reported in is mainly based on the focused ion beam FIB (focus iron beam) technology, depositing electrodes at both ends of the object to be tested for measurement, but once the circuit is built, the length of the nanowires between the electrodes And the position of the electrode cannot be changed, and the electrical behavior of the sample to be tested under the action of an electric field and the change of the atomic-scale microstructure cannot be directly observed under the transmission electron microscope

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