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Bipolar transistor and method of fabricating the same

A bipolar transistor and base technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increasing the number of manufacturing steps and increasing manufacturing costs, so as to reduce series resistance and improve high-frequency performance Effect

Active Publication Date: 2009-08-26
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Another disadvantage is the need for stacked layers in order to create the transistor opening area in which the bipolar transistor is formed, which increases the number of manufacturing steps and therefore increases the manufacturing cost

Method used

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  • Bipolar transistor and method of fabricating the same
  • Bipolar transistor and method of fabricating the same
  • Bipolar transistor and method of fabricating the same

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Embodiment Construction

[0016] The figures are not drawn to scale. Generally, like parts are indicated by like reference numerals in the drawings.

[0017] figure 1 An initial structure is shown comprising a silicon substrate 1 provided with two shallow trench isolation regions 2 and 3 fabricated using standard CMOS fabrication techniques. The shallow trench isolation regions 2 and 3 may include silicon dioxide or any other insulating material.

[0018] Next, if figure 2 As shown, a resist layer 99 is formed, and a transistor opening region 98 is formed by photolithography, exposing a part of the shallow trench isolation region 2 and a part of the silicon substrate 1 . The exposed portion of the shallow trench isolation region 2 is selectively etched with respect to the silicon substrate 1 . At this time, grooves 4 and protrusions 5 are formed, and protrusions 5 contain silicon substrate 1 . The trench 4 has a first sidewall adjacent to the shallow trench isolation region 2 , a second sidewall ...

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Abstract

The present invention provides a bipolar transistor with reduced collector series resistance integrated in a trench (4, 44) of a standard CMOS shallow trench isolation region. The bipolar transistor includes a collector region (6, 34) fabricated in one fabrication step, thus having a shorter conduction path, reducing collector series resistance and improving the high frequency performance of the bipolar transistor. The bipolar transistor also includes a base region (8, 22, 38) and an emitter region (10, 24, 39), a first portion of the base region being located in the collector region (6, 44) on the bottom of the trench (4, 44). 34), the emitter region is located on a selected portion of the first portion of the base region (8, 22, 38). A base contact (11, 26, 51) is in electrical contact with the base region (8, 22, 38) on a second portion of the base region (8, 22, 38) on the insulating region (2, 42). The collector region (6, 34) is in electrical contact with the collector contact (13, 25, 50) on top of the protrusion (5, 45).

Description

technical field [0001] The present invention relates to bipolar transistors and methods for their manufacture. Background technique [0002] In WO 03 / 100845 a method of manufacturing a bipolar transistor is disclosed in which a substrate is provided with two shallow trench isolation regions and an insulating layer overlying the substrate. In addition, three different collector layers are provided for forming the conductive path from the collector to the substrate surface, including an N-type collector epitaxial layer between two shallow trench isolation regions, a buried collector n-layer and n plunger (plug) heat sink (sinker). A layer structure including a conductive layer is formed on the insulating layer, after which the transistor opening area is etched through the conductive layer. Afterwards, a SiGe base layer is deposited on the inner wall of the opening of the transistor region, thereby electrically connecting the SiGe base layer with the conductive layer and the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/31H01L29/732H01L29/737
Inventor 约翰内斯·J·T·M·唐克斯韦伯·D·范诺尔特菲利浦·默尼耶-贝拉德塞巴斯蒂恩·尼坦克埃尔温·海曾弗朗索瓦·纳耶莉
Owner NXP BV
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