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Heterojunction material with magnetoresistance characteristics

A heterojunction and magnetoresistance technology, which is applied in the direction of magnetic field-controlled resistors, magnetic objects, magnetic films, etc., can solve the problem that the sensitivity cannot meet the practical requirements, and achieve low-field sensitivity, high sensitivity, and wide application Effect

Inactive Publication Date: 2009-06-24
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the doped manganese oxide at room temperature and low field conditions, its sensitivity can not meet the practical requirements

Method used

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  • Heterojunction material with magnetoresistance characteristics
  • Heterojunction material with magnetoresistance characteristics
  • Heterojunction material with magnetoresistance characteristics

Examples

Experimental program
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Effect test

Embodiment 1

[0028] refer to figure 1 , making a 2-layer heterojunction material with magnetoresistance properties.

[0029] Using laser molecular beam epitaxy equipment, select n-type single crystal Si with a resistivity of 2-6Ω.cm and 2 inches of single-sided polishing as the substrate 1, and adopt conventional laser molecular beam epitaxy technology, at 1×10 -2 Under the oxygen condition of Pa, epitaxial growth of 250nm thick La on Si substrate 1 0.9 Sr 0.1 MnO 3 The thin film is used as the doped manganese oxide layer 2. Then at 1×10 -3 Under the oxygen condition of Pa, in the 250nm thick La 0.8 Sr 0.1 MnO 3 An oxygen-deficient strontium titanate film with a thickness of 100 nm was epitaxially grown on the film 2 as the first auxiliary layer 3, at 1×10 -3 Under the oxygen condition of pa, the prepared SrTiO 3-δ The δ of the thin film is about 0.4. A 2-stacked heterojunction material with magnetoresistance properties is prepared, in which the doped manganese oxide layer 2 and...

Embodiment 2

[0031] According to the preparation process of Example 1, use BrTiO 3-δ Instead of SrTiO 3-δ Doping manganese oxide 2, preparing the second auxiliary layer 4 made of doped manganese oxide 2 and oxygen-deficient barium titanate layer, to form a 2-stacked heterojunction material with magnetoresistance characteristics.

Embodiment 3

[0033] According to the preparation process of Example 1, use LaAlO 3-δ Instead of SrTiO 3-δ Make the third auxiliary layer 5, prepare the third auxiliary layer 5 made of the doped manganese oxide layer 2 and the oxygen-deficient lanthanum aluminate, and make a heterojunction material with magnetoresistance characteristics of 2 stacks.

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Abstract

The invention relates to a novel heterojunction material with magnetoresistance characteristics, comprising a doped manganese oxide layer grown on a substrate, and an auxiliary layer grown on the doped manganese oxide layer; on the auxiliary layer A doped manganese oxide layer is grown, an auxiliary layer is grown on the doped manganese oxide layer, and stacked in sequence; two kinds of material heterojunction magnetoresistance materials are prepared. It is also possible to periodically alternately stack three materials doped with manganese oxide, strontium titanate and lanthanum aluminate or strontium titanate and barium titanate, or barium titanate and lanthanum aluminate to prepare three materials The multilayer film or the magnetoresistance heterojunction material of the superlattice structure, wherein the thickness of the doped manganese oxide layer is 0.8nm-5μm, and the thickness of the auxiliary layer is 0.8nm-5μm. The above-mentioned heterojunction materials have low-field and high-sensitivity magnetoresistance characteristics, and have a magnetoresistance change rate greater than 30% even at room temperature, and have a very wide range of applications in magnetic recording, magnetic heads, and sensors.

Description

technical field [0001] The invention relates to a heterojunction material, in particular to a series of heterojunction materials with magnetoresistance characteristics. Background technique [0002] Doped lanthanum manganate (LaMnO 3 ) is a functional material with giant magnetoresistance properties, as described in Document 1: Ken-ichi Chahara, Toshiyuki Ohno, Masahiro Kafai and Yuzoo Kozono, Appl. Phys. Lett. 63, 1990 (1993). Another example is document 2: S. Jin, T. H. Tiefel, M. McCormack, R. A. Fastnacht, R. Ramesh, and L. H. Chen, Science 264, 423 (1994)). The application of this material in magnetic recording, magnetic head and sensor etc. has attracted people's interest and attention at present, such as literature 3: M.Rajeswari, A.Goyal, A.K.Raychaudhuri, M.C.Robson, G.C.Xiong, C.Kwon, R. Described in Ramesh, R.L. Greene and T. Venkatesan, Appl. Phys. Lett. 69, 851 (1996). However, due to the doped manganese oxide at room temperature and low field conditions, its...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/10H01F10/00H10N50/10
Inventor 吕惠宾何萌赵昆黄延红金奎娟刘国珍邢杰陈正豪周岳亮杨国桢
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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