Field effect transistor structure, associated semiconductor storage cell, and corresponding production method

Abstract

The invention relates to a field effect transistor structure, an associated semiconductor storage cell, and a corresponding production method. A diode-doping area (4) within a semiconductor substrate (1) is embodied with a field effect transistor structure (S / D, 3, K) while an electrically conducting diode-connecting layer (5) connects a control layer (3) of the field effect transistor structure to the diode-doping area (4) so as to create a diode (D), whereby excess charge carriers (L) in the semiconductor substrate (1) can be eliminated such that an undesired body effect is prevented.

Description

technical field [0001] The present invention relates to a field effect transistor structure, a related semiconductor storage unit and its related manufacturing method, and in particular to a field effect transistor structure that can be used in dynamic random access (DRAM) memory. Background technique [0002] In semiconductor technology, so-called dynamic random access memories (DRAM) are produced in particular using state-of-the-art technology with the highest integration density; however, with increasing packaging density or integration density, the following difficulties arise in DRAM semiconductor memories: [0003] In order to control the short channel behavior (roll-off, roll-off) of the selection transistor in the DRAM semiconductor memory unit, in all production technologies, it is necessary to increase the related well doping (welldoping) or channel implantation (channel implant); However, this method will generate high body effect and damage the writing behavior o...

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Problems solved by technology

[0016] However, a deficiency of the body or the semiconductor substrate directly adjacent to the field effect transistor or its high-impedance well connection will sooner or later have a charging effect and will thus reduce the effective threshold voltage and thus the leakage current due to the body effect Therefore, it increases; especially in the example of the DRAM semiconductor memory unit shown in Figure 3, its memory time (retention time) will be affected accordingly

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