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Method for manufacturing high-efficiency silicon solar cell via phosphorus boron synchronous diffusion

A technology for silicon solar cells and phosphorus diffusion, which is applied in final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc. The effect of low production cost and maintaining efficiency

Active Publication Date: 2008-08-20
HANWHA SOLARONE QIDONG
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Such a process is complicated and the manufacturing cost is high, which is not conducive to large-scale production

Method used

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  • Method for manufacturing high-efficiency silicon solar cell via phosphorus boron synchronous diffusion
  • Method for manufacturing high-efficiency silicon solar cell via phosphorus boron synchronous diffusion

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Embodiment Construction

[0011] A method for simultaneously diffusing phosphorus and boron to manufacture high-efficiency silicon solar cells, comprising boron and phosphorus diffusion steps, boron and phosphorus diffusion adopts the following steps: take a source sheet 2 with a plurality of parallel grooves 1, place a The left and right halves of the groove are coated with SiO by APCVD method (that is, atmospheric pressure chemical vapor deposition method) or coating method. 2 / B 2 o 3 , SiO 2 / P 2 o 5 The glass body is dried at 200-600°C (for example, 200°C, 300°C, 400°C, 500°C, 600°C), and then a silicon chip 3 with the same dimensions as the source chip is inserted in the center of each groove to make the silicon chip 3 Perpendicular to the source sheet 2, perform diffusion treatment at 950-1100°C (eg 950°C, 1000°C, 1050°C, 1100°C) for 10-60 minutes (eg 10 minutes, 30 minutes, 60 minutes), during the diffusion treatment, Protected with nitrogen, the flow rate of nitrogen is 20-30 liters / minut...

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Abstract

The disclosed method to process high-effective silicon solar cell comprises: selecting source piece with multiple parallel grooves to coat SiO2 / B2O3, SiO2 / P2O5 on every left / right half respectively; baking at 200-600Deg; inserting silicon slice into center of groove for diffusion at 950-1100Deg. This invention can hold lifetime of minority carrier for high charge efficiency with low cost.

Description

Technical field: [0001] The invention relates to a method for manufacturing high-efficiency silicon solar cells. Background technique: [0002] High-efficiency silicon solar cells with boron back field or PERT structure based on boron back field have been applied in production, but adding boron diffusion process before and after manufacturing P-N junction phosphorus diffusion requires complex masking process, usually first in 600nm SiO on silicon surface 2 layer, then the front side is protected with glue, and the back side SiO 2 Layer, remove the protective glue and clean it, then expand the boron on the back, form a boron diffusion layer of about 1 μm at 1050°C, and then grow 600nm SiO at high temperature 2 , use glue to protect the back side (boron expansion side), and remove the front side SiO 2 After removing the glue and cleaning, diffuse a 0.3-0.5 μm phosphorus layer on the front side, remove the oxide layer on the back side, and then metallize (screen printing) bo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/22
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor 袁永健王玉亭王汉飞赵亮
Owner HANWHA SOLARONE QIDONG
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