Grinding structural unit

Abstract

A grinding member is composed of a grinding disk, a grinding liner on said grinding disk and a grinding pad on said grinding liner. It features that said grinding liner has one concave-convex surface.

Description

technical field [0001] The invention relates to a grinding member, in particular to a grinding member capable of increasing the grinding rate of a fixed abrasive chemical mechanical polishing method. Background technique [0002] In the semiconductor process, as the size of components continues to shrink, the resolution of lithography exposure increases relatively, and with the reduction of exposure depth of field, the requirements for the level of fluctuations on the wafer surface are more stringent. Therefore, the current wafer planarization (Planarization) is completed by chemical mechanical polishing process. Its unique anisotropic grinding properties can be applied to vertical and horizontal metal Fabrication of the mosaic structure of the interconnection mechanism (Interconnects), shallow trench isolation (Shallow trench isolation, STI) fabrication of components in the front-end process, fabrication of advanced components, micro-electromechanical system planarization, ...

AI Technical Summary

Problems solved by technology

[0006] When the surface of the object to be ground tends to be flattened, since the grinding pad 110 is also a flat surface, the object to be ground will be difficult to remove the binder in the grinding pad 110, so that the grinding rate of the object to be ground will be reduced. will decrease rapidly and sharply, so that the abrasive cannot be effectively removed and cause the residue of the abrasive

[0007] Moreover, in the application of the shallow trench isolation structure process, in order to avoid the problems that there is still too thick planarized silicon oxide (ground object) on the wafer after the wafer is planarized, which will cause the aforementioned grinding rate reduction and silicon oxide residue problems, Therefore, the overburden of silicon oxide on the silicon nitride in the active region must be controlled to be less than a predetermined height, but this will limit the process width of the silicon oxide gap fill process.

[0008] Moreover, also in the application of the shallow trench isolation structure process, for the shallow trench isolation structure process of 90nm and less than 90nm, since the process width of silicon oxide trench filling is getting smaller and smaller, the silicon nitride in the active region The height of the silicon oxide on the surface often exceeds the predetermined height, which may cause the aforementioned problems of reduced grinding rate and silicon oxide residue, making it difficult to apply the abrasive cloth chemical mechanical polishing method to the shallow isolation structure process of 90nm and less than 90nm

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