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Megasonic immersion lithography exposure apparatus and method

a technology of lithography and immersion lithography, which is applied in the field of photolithography processes, can solve problems such as distortion of circuit pattern images projected onto the photoresis

Active Publication Date: 2007-05-29
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The method effectively removes microbubbles from the exposure liquid and resist surface, preventing distortion of the circuit pattern image and ensuring high-resolution pattern transfer onto the photoresist, enhancing the lithography process by maintaining image clarity and resolution.

Problems solved by technology

These remaining microbubbles have a tendency to adhere to the typically hydrophobic surface of the photoresist, thereby distorting the circuit pattern image projected onto the photoresist.

Method used

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  • Megasonic immersion lithography exposure apparatus and method
  • Megasonic immersion lithography exposure apparatus and method
  • Megasonic immersion lithography exposure apparatus and method

Examples

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Embodiment Construction

[0025]The present invention contemplates a novel megasonic immersion lithography exposure apparatus for substantially eliminating microbubbles from an exposure liquid before, during, or both before and during immersion lithography. In one embodiment, the apparatus includes an optical housing which is fitted with a photomask and a lens. An optical transfer chamber is provided beneath the lens of the optical housing. An inlet conduit is provided in fluid communication with the optical transfer chamber to distribute an immersion liquid into the chamber. At least one megasonic plate operably engages the inlet conduit to perpetuate sonic waves through the immersion liquid as the liquid is distributed through the inlet conduit and into the optical transfer chamber. In another embodiment, an annular megasonic plate encircles the optical transfer chamber of the apparatus.

[0026]In operation of the apparatus, the optical transfer chamber is positioned over an exposure field on a photoresist-c...

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Abstract

A megasonic immersion lithography exposure apparatus and method for substantially eliminating microbubbles from an exposure liquid in immersion lithography is disclosed. The apparatus includes an optical system for projecting light through a mask and onto a wafer.An optical transfer chamber is provided adjacent to the optical system for containing an exposure liquid. At least one megasonic plate operably engages the optical transfer chamber for inducing sonic waves in and eliminating microbubbles from the exposure liquid.

Description

FIELD OF THE INVENTION[0001]The present invention relates to photolithography processes used in the formation of integrated circuit (IC) patterns on photoresist in the fabrication of semiconductor integrated circuits. More particularly, the present invention relates to a megasonic immersion lithography exposure apparatus and method in which immersion liquid is subjected to megasonic waves to obliterate bubbles from the liquid during a lithography exposure step.BACKGROUND OF THE INVENTION[0002]Various processing steps are used to fabricate integrated circuits on a semiconductor wafer. These steps include deposition of a conducting layer on the silicon wafer substrate; formation of a photoresist or other mask such as titanium oxide or silicon oxide, in the form of the desired metal interconnection pattern, using standard lithographic or photolithographic techniques; subjecting the wafer substrate to a dry etching process to remove the conducting layer from the areas not covered by the...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G03B27/52
CPCG03F7/70341
Inventor CHANG, CHING-YULIN, CHIEN-HUNGLIN, CHIN-HSIANGLU, DAVIDTSENG, HORNG-HUEILIN, BURN-JENG
Owner TAIWAN SEMICON MFG CO LTD
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