Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber

Inactive Publication Date: 2019-01-17
ASM IP HLDG BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

The present patent is about a system and method for removing both carbon-based and oxygen-based contaminants from semiconductor films. The system includes a reaction chamber, a susceptor, a showerhead, a remote plasma unit, and a transport path. The system can clean semiconductor substrates made of silicon, silicon germanium, or germanium, as well as dielectric materials such as silicon oxide, silicon nitride, silicon oxynitride, fluorinated silicon oxide, silicon carboxide, and silicon carboxynitride. The system can also be used to clean patterned wafer surfaces. The technical effect of this patent is to provide a system that can remove both carbon-based and oxygen-based contaminants from semiconductor films in a single processing chamber, which is more efficient and effective than prior approaches.

Problems solved by technology

Contaminates on the substrate may adversely affect mechanical and electrical properties of the semiconductor devices formed.
This may be in part due to equipment limitations of the prior approaches.

Method used

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  • Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber
  • Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber
  • Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber

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Embodiment Construction

[0014]Although certain embodiments and examples are disclosed below, it will be understood by those in the art that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and obvious modifications and equivalents thereof. Thus, it is intended that the scope of the invention disclosed should not be limited by the particular disclosed embodiments described below.

[0015]Embodiments of the invention are directed to a system with a single process chamber having a capability to remove both carbon-based contaminants and oxygen-based contaminants. The embodiments have several advantages over prior approaches including: (1) incorporation of at least one remote plasma unit (RPU) with the ability to generate both hydrogen radicals and fluorine radicals; and (2) compatibility of the process chamber with both hydrogen radicals and fluorine radicals.

[0016]Embodiments of the invention may be used to clean semiconductor substrates made of at least one of the...

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Abstract

A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATION[0001]The present disclosure claims the benefit of U.S. Provisional Patent Application No. 62 / 532,248, filed on Jul. 13, 2017 and entitled “APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER,” which is incorporated herein by reference.FIELD OF INVENTION[0002]The present disclosure generally relates to an apparatus and a method for manufacturing electronic devices. More particularly, the disclosure relates to removal of oxide and carbon within semiconductor films formed in a processing chamber.BACKGROUND OF THE DISCLOSURE[0003]Prior to the fabrication of semiconductor device, a clean surface of a wafer or substrate is desired. Contaminates on the substrate may adversely affect mechanical and electrical properties of the semiconductor devices formed. It is desired that these contaminates be removed before particular films are deposited onto the substrate.[0004]Contaminants that exist...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/67B08B5/00B08B7/00
CPCH01L21/02046B08B7/0035B08B5/00H01L21/67017H01J37/32449H01J37/32715H01L21/31138H01J37/32357
Inventor LIN, XINGGAO, PEIPEIWANG, FEITOLLE, JOHNJOTHEESWARAN, BUBESH BABURAMANATHAN, VISHHILL, ERIC
Owner ASM IP HLDG BV
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