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Active double or multi gate micro-electro-mechanical device with built-in transistor

a micro-electro-mechanical device and transistor technology, applied in the field of vibrating micro electro mechanical systems, can solve the problems of difficult scaling of capacitive transduced passive mem resonators, and achieve the effect of strong reduction of signal transmission parameters and scaling

Inactive Publication Date: 2010-07-08
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention is about improving the performance of vibrating micro electro mechanical systems (MEMS) and transistors by combining the amplification provided by the integration of a FET (or similar active device) with the signal modulation provided by the MEM resonator. This results in an active MEM resonator with intrinsic signal gain. The invention uses a double gate configuration, which simplifies the fabrication process and reduces the number of interconnections needed. The invention also takes advantage of the piezoresistive effect to modulate the current in the transistor body, which can be uniaxial or biaxial. The invention can be extended to resonators, non-resonant embodiments of transistor based motion detection, and other two-terminal or multi-terminal gated devices where the device body is suspended and vibrates. The invention offers better sensitivity to vibration amplitude and better static power consumption compared to previous solutions.

Problems solved by technology

Especially the dependence on the electrode surface makes scaling of capacitive transduced passive MEM resonators difficult without strongly decreasing the signal transmission parameters.

Method used

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  • Active double or multi gate micro-electro-mechanical device with built-in transistor
  • Active double or multi gate micro-electro-mechanical device with built-in transistor
  • Active double or multi gate micro-electro-mechanical device with built-in transistor

Examples

Experimental program
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Embodiment Construction

1. Active MEM Resonator Device Structure

[0037]A simplified three dimensional drawing is shown in FIG. 1. The gate G1, G2 structures 1 and 1′ are laterally placed and fixed with respect to the substrate.

[0038]A source region 2, a drain region 3 and a low doped body region 4 connecting the source and drain form the active MEM resonator. The channels 5, 5′ are formed at the lateral interfaces of the body regions 2, 3 and 4. The active MEM resonator is connected by elastic means 6 to the substrate. Along the channel-to-air gap interface, a possible gate stack 7 can be placed. If the drain and source have the same type of doping (e.g. n+ or p+), the structure operates a vibrating FET (enhancement or accumulation transistor: n+−p−n+, p+−n−p+, n+−n−n+, p+−p. p+).

[0039]If the drain and the source have opposite dopings and the central part is low doped the structure transforms in a p-i-n junction and can be operated as vibrating tunnel FET (gate overlapped on the central body) or as a vibrat...

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Abstract

The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other active device with two or more terminals), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transistor (hereafter called active MEM resonator). In these devices, a mechanical displacement is converted into a current modulation and depending on the active MEM resonator geometry, number of gates and bias conditions it is possible to selectively amplify an applied signal. This invention integrates proposes to integrate transistor and micro-electro-mechanical resonator operation in a device with a single body and multiple surrounding gates for improved performance, control and functionality. Moreover, under certain conditions, an active resonator can serve as DC-AC converter and provide at the output an AC signal corresponding to its mechanical resonance frequency.

Description

FIELD OF THE INVENTION[0001]The present invention concerns the field of vibrating micro electro mechanical systems (MEMS) and transistors, in particular the combination of both to improve the performances of MEM resonators.PRIOR ART AND PRINCIPLE OF THE INVENTION[0002]The present invention exploits the combination of the amplification, provided by the integration of a FET (or similar active device), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with intrinsic signal gain (hereafter called active MEM resonator). Depending on the active MEM resonator dimensions and under certain bias conditions it is possible to selectively amplify an applied signal.[0003]The principle of such device operating in a Double Gate configuration has been fully validated for the first time by the inventors of the present application in a 2008 publication [1], which is incorporated by reference in its entirety in the present application and is in total contrast with the ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H03H11/04
CPCH03H3/0073H03H9/2426H03H9/465H03H2009/02314
Inventor IONESCU, MIHAI ADRIANGROGG, DANIEL
Owner ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
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