Resistance ram having oxide layer and solid electrolyte layer, and method for operating the same
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
preparation example
[0042]After the silicon oxide layer and the titanium layer are formed on the silicon substrate, the Pt layer is formed as the first electrode. On the Pt layer, the Gd2O3 layer as the oxide layer was formed in a thickness of 10 nm by using a deposition method. On the Gd2O3 layer, the MoOx layer (X:1.5-2.5) that is doped with Cu in an amount of 10 at. %, that is, the Cu:MoOx layer, as the solid electrolyte layer that is doped with the metal ion was formed in a thickness of 50 nm by using a deposition method. On the Cu:MoOx layer, the Pt layer as the second electrode was formed, such that the resistance RAM was prepared.
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com