Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for outputting internal temperature data in semiconductor memory device and circuit of outputting internal temperature data thereby

a technology of semiconductor memory devices and internal temperature data, which is applied in the field of temperature sensing, can solve the problems of reducing the reliability of temperature data, lowering the accuracy of obtained temperature data, and reducing the power consumption of the device, so as to achieve the effect of shortening the time and reducing the power consumption

Inactive Publication Date: 2007-05-17
SAMSUNG ELECTRONICS CO LTD
View PDF43 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0013] One aspect of the present invention is a method for outputting internal temperature data in a semiconductor memory device which can provide a temperature sensor onboard in the semiconductor memory device with a stable operation environment, and a circuit for outputting the internal temperature data thereby.
[0016] Another aspect of the present invention is a method for outputting temperature data so as to obtain more reliable temperature data within a shorter time, minimizing or reducing power consumed in a temperature sensor onboard in the DRAM.
[0020] According to the method for outputting the temperature data, power consumption can be reduced and relatively accurate temperature data can be externally output within a shorter time.

Problems solved by technology

However, the temperature sensor as described above is very sensitive to a noise environment, and thus the deviation of the temperature data as output according to the operation modes of the semiconductor memory device may be great.
Consequently, there are problems in that accuracy of the obtained temperature data is lowered and reliability of the temperature data is also lowered accordingly.
That is, if the external command is applied when the DRAM performs an operation of reading the data, it is difficult for the temperature sensor to sense the present temperature data in a sufficiently stable state, and it may output deviated temperature data due to the noise environment.
Consequently, the reliability of the internal temperature data as obtained is lowered, and power consumption is increased since the temperature sensor is in the continuously or periodically operating state.
Moreover, since an output access time of the temperature data is indicated as access section TA of FIG. 3, there is a problem in that the time for the chip-set to obtain the temperature data becomes somewhat long.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for outputting internal temperature data in semiconductor memory device and circuit of outputting internal temperature data thereby
  • Method for outputting internal temperature data in semiconductor memory device and circuit of outputting internal temperature data thereby
  • Method for outputting internal temperature data in semiconductor memory device and circuit of outputting internal temperature data thereby

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The foregoing and other objects, features and advantages of the present invention will be more apparent from the preferred embodiments described in detail hereinafter, with reference to the accompanying drawings. However, the invention should not be construed as limited to only the embodiments set forth herein. Rather, these embodiments are presented as teaching examples. It should be noted that in the drawings, the same or similar portions are indicated using the same or similar reference numbers for the convenience of explanation and understanding.

[0030]FIG. 4 illustrates temperature data output timing according to a first embodiment of the present invention. FIG. 4 shows a timing relation in which internal temperature data of a semiconductor memory device is externally output when an external request signal, e.g., an expansion mode register set (EMRS) command, is applied while the semiconductor memory device is not in a data access mode and a temperature sensor is in an i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for outputting internal temperature data in a semiconductor memory device can output, at high speed, relatively accurate temperature data externally, without continuously or periodically driving a temperature sensor. The method for outputting the internal temperature data comprises externally outputting internal temperature data stored in a register in a preceding driving cycle in response to a temperature data request signal; driving a temperature sensor during a predefined time section after the output of the internal temperature data is completed; and storing the internal temperature data obtained from the temperature sensor in the register. Power consumption is reduced and accurate temperature data is output externally within a shorter time.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] This application is a continuation-in-part of co-pending U.S. patent application Ser. No. 11 / 335,036, filed 18 Jan. 2006, which claims priority from Korean Patent Application No. 10-2005-0005277, filed Jan. 20, 2005, the contents of which are hereby incorporated by reference in their entirety.BACKGROUND OF THE INVENTION [0002] 1. Technical Field [0003] The present invention relates to temperature sensing to be applied in a semiconductor memory device, and more particularly, to a method for outputting internal temperature data in a volatile semiconductor memory device such as Dynamic Random Access Memory (DRAM) and a circuit for outputting the internal temperature data thereby. [0004] 2. Discussion of Related Art [0005] Generally, for high-efficiency electronic systems such as personal computers or electronic communication machinery, volatile semiconductor memory devices such as DRAM onboard as memory have become faster and more highly i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): H03K19/003
CPCG01K7/42G11C7/1069G11C11/40626G11C2207/2227
Inventor LEE, SEUNG-HOONPARK, CHUL-WOO
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products