Thermoelectric material having crystal grains well oriented in certain direction and process for producing the same
a crystal grain, well-oriented technology, applied in the direction of thermoelectric device junction materials, thermoelectric device manufacture/treatment, electrical apparatus, etc., can solve the problems of low merit figure, brittleness of thermoelectric material produced through the prior art unidirectional solidification process, and fine powder has reached the limit, etc., to achieve the effect of large merit figur
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[0043]FIG. 4 shows a process sequence for producing thermoelectric material embodying the present invention. The process includes seven steps S1 to S7. The process starts with blending constituent elements of the thermoelectric material at a predetermined composition ratio as by step S1. The constituent elements are scaled, and, thereafter, are mixed with one another. The constituent elements are dependent on the composition of the thermoelectric material. In case where the thermoelectric material is in the bismuth-antimony-tellurium-selenium system, i.e., Bi—Sb—Te—Se system, the bismuth, antimony, tellurium and selenium are the constituent elements. The mixture of the constituent elements is hereinbelow referred to as “pellets”.
[0044] Subsequently, the pellets are sealed in an ampul as by step S2. The pellets are heated over the melting point, and an ingot is produced from the pellets in the ampul as by step S3. The ingot is taken out from the ampul. The ingot is...
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