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Dram cam cell with hidden refresh

a cam cell and cam technology, applied in the field of dynamic content addressable memory (dcam) cells, can solve the problems of dcam cells being temporarily unavailable for cam searches, destructive reads and slower performance, and scams are generally more vulnerable than dcams to soft errors,

Inactive Publication Date: 2002-06-06
GLOBALFOUNDRIES US INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Content Addressable Memory (CAM) arrays of the related art are generally implemented with either conventional Static RAM (SRAM) or conventional destructive-read Dynamic RAM (DRAM) hardware designs, and therefore have all the disadvantages and limitations of one such hardware design or the other.
An SCAM is generally more vulnerable than a DCAM to corruption of stored data by Soft-Errors (e.g., stored data errors due to exposure of circuits to ambient radiation).
A typical ternary Dynamic CAM (DCAM) cell of the related art may contain fewer transistors than an SCAM, but may have disadvantages including destructive-reads and slower performance.
The related art provides various DCAM cell structures that are limited in that refresh-reads proceed by charge-transfer thus destroying the data stored in the data-storage capacitors, making the DCAM cell temporarily unavailable for CAM searches until the data is written back into the DCAM cell by a refresh-write.
Also, limitations of the ability to sense the relatively small charge-transfer from the storage capacitor to a capacitive bit-line coupled thereto limits the maximum array population on such bit-lines, and / or requires larger storage capacitors.

Method used

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  • Dram cam cell with hidden refresh
  • Dram cam cell with hidden refresh
  • Dram cam cell with hidden refresh

Examples

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Embodiment Construction

[0021] FIG. 2A depicts a circuit diagram of a ternary Dynamic Content Addressable Memory (DCAM) cell 200a in accordance with an embodiment of the present invention. The inventive ternary DCAM cell 200a includes two capacitors (SB0 and SB1) that function as data storage devices. Each of these capacitors is independently charged High to store a logical One ("1") or discharged Low to store a logical Zero ("0").

[0022] Ternary DCAM 200a further comprises two memory storage cells (CELL0=210a, CELL1=211a) each of which is merged with one of the two transistor stacks (T2-T4 and T3-T5 respectively) of the XNOR comparison circuit 202 that is connected between the MATCH LINE and ground. By storing a "1," or a "1" (preferably a "0") in both memory storage cells (e.g., 210a and 211a), the ternary DCAM cell 200a stores a "mask" state which allows a local mask logic value to be stored within a given word entry. The ability to store a "mask" logic state in each DCAM cell (e.g., 200a) in a DCAM entr...

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PUM

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Abstract

A Dynamic Content Addressable Memory (DCAM) cell topology that contains fewer that can perform a "hidden" refresh of stored data that does not delay nor interrupt the CAM search cycle, thereby providing SCAM-like performance. A non-destructive read operation, is performed such that the stored-data does not have to be written back because of a refresh-read operation. A reliable CAM search can be performed after a read operation and before or even while the refresh-data is being written back. Soft-error detection processes can be performed on each CAM entry during the pendency of the refresh cycle. The DCAM cell can be used in a digital system such as a digital computer and a Network Router.

Description

[0001] 1. Technical Field[0002] The invention relates generally to semiconductor memory devices, and more specifically to a Dynamic Content Addressable Memory (DCAM) Cell.[0003] 2. Related Art[0004] Modern telecommunication networks comprise digital data networks that transmit data in packets or blocks containing address fields for dynamically routing the data packets or blocks through the network (e.g., to the destination address) at high speeds. The fastest searching of stored data may be accomplished using a Content Addressable Memory (CAM).[0005] As the size of networks (e.g., intranets and the Internet) increase the need for larger CAM arrays increases, and accordingly, the need to attach more CAM cells to a common bit line increases. Content Addressable Memory (CAM) arrays of the related art are generally implemented with either conventional Static RAM (SRAM) or conventional destructive-read Dynamic RAM (DRAM) hardware designs, and therefore have all the disadvantages and limi...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G11C15/00G11C15/04
CPCG11C15/043G11C15/04G11C15/00
Inventor BATSON, KEVIN A.BUSCH, ROBERT E.KOCH, GARRETT S.
Owner GLOBALFOUNDRIES US INC
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