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Material for conductor tracks made of copper alloy

A technology of wire material and copper alloy, applied in metal material coating process, semiconductor/solid-state device manufacturing, semiconductor device, etc.

Active Publication Date: 2007-06-20
PLANSEE SE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Even so, none of these alloys possess sufficient adhesion to the glass matrix while simultaneously possessing sufficient oxidation resistance and resistance to electromigration

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] Copper powder with a particle size of 130 microns was mixed with the respective alloy powders in a diffusion mixer. The mixed powder is introduced into a container made of unalloyed steel, degassed, and the container is evacuated and sealed in an airtight manner.

[0013] The thermal compression was carried out in a HIP apparatus at a temperature of 100° C. to 200° C. below the respective solidus lines constituting the copper alloy and a pressure of 2000 bar. In all alloy variants, the density is greater than 98% of theoretical and the grain size is less than 500 microns. Three-dimensional is 300×150×10mm 3 The sputtering target and three-dimensional is 50 x 50 x 2mm 3 The oxidized samples were fabricated using a hot isostatic briquetting machine. Thereafter, each layer of 0.5 micron thickness is deposited on the glass substrate (liquid crystal display glass) by magnetron sputtering, and the adhesiveness of these layers is qualitatively measured and evaluated by tape...

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Abstract

The invention relates to a material for conductor tracks made of copper alloy containing Cu > 90 At. %, whereby said material contains 0.5 to 10 At. % of one or more elements from the group consisting of Ca, Sr, Ba, Sc, Y, lanthanide, Cr, Ti, Zr, Hf, Si; and 0 to 5 At. % of one or more elements from the group consisting of Mg, V, Nb, Ta, Mo, W, Ag, Au, Fe, B. Said material has a low electrical resistance, good adhesion to the glass substrate, excellent oxidation resistance, and a low electromigration rate.

Description

technical field [0001] The invention relates to a copper alloy wire material with a copper content of more than 90 atomic percent and a sputtering target used for deposition of the material. Background technique [0002] A wire system is a basic component of a microelectronic device consisting of one or more wires coated on a substrate; various coating methods can be used, such as PVD or CVD. As the required response time becomes shorter and microelectronic devices become larger and larger, the requirements for the conductivity of materials used as wires become higher and higher, such as the gates of thin-film transistor liquid crystal displays (TFT- LCD). Therefore, only materials with sufficiently high conductivity, such as aluminum or high melting point metals and their alloys, are used as wires. [0003] Copper is the ideal material in terms of conductivity and material cost. But when deposited on glass, copper has poor layer bonding. Furthermore, the antioxidant pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/00C23C14/34H01L21/00B22F1/00H01L23/498H01L23/532
CPCC23C14/3414H01L2924/3011C22C9/00H01L23/53233H01L2924/0002H01L23/49866
Inventor 迈克尔·奥沙利文彼得·威哈提兹格哈德·莱彻弗莱德
Owner PLANSEE SE
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