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Tungstic acid thin film air-sensitive sensor surface modifying method

A gas sensor, tungsten trioxide technology, applied in the field of gas sensors, can solve the problems of high working temperature, poor selectivity, long recovery time, etc., achieve the effect of uniform thickness, improved gas sensing performance, and increased selectivity

Inactive Publication Date: 2007-06-06
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the research on tungsten trioxide thin-film gas sensor is in the ascendant, but whether the tungsten trioxide gas-sensitive thin film is prepared by sol-gel method, vacuum evaporation method or sputtering method, it still faces the following problems: 1) the working temperature is too high high, it has NO 2 The working temperature is 200~250℃, for H 2 The working temperature is 300-350°C, for CO the working temperature is 300-350°C, for NH 3 The working temperature is 250~350℃, for C 2 h 5 The working temperature of OH gas is 300-350°C; 2) The selectivity is poor, and the sensitivity to the above-mentioned gases is close at 250-350°C; 3) The response / recovery time is too long, up to 5 minutes / 20 minutes

Method used

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  • Tungstic acid thin film air-sensitive sensor surface modifying method
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  • Tungstic acid thin film air-sensitive sensor surface modifying method

Examples

Experimental program
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Effect test

Embodiment 1

[0020] 1) Using Al with a thickness of 350 μm, a length of 2.5 cm, and a width of 1.0 cm 2 o 3 The ceramic substrate was ultrasonically cleaned with acetone for 10 minutes, rinsed with deionized water, then ultrasonically cleaned with absolute ethanol for 10 minutes, rinsed with deionized water, and dried at 50°C for later use; 2) Al 2 o 3 An iron finger mask with a thickness of 100 μm is attached to the ceramic substrate. Masked Al 2 o 3 The substrate is placed in the vacuum chamber of the DPS-III type ultra-high vacuum facing target magnetron sputtering equipment. The metal platinum with a mass purity of 99.95% is used as the target material, and argon gas with a mass purity of 99.999% is used as the working gas. The specific steps of controlled sputtering are: pumping the vacuum to 2.5×10 -4 Pa, the argon gas flow rate is 25ml / min, the sputtering working pressure is 2.0Pa, the sputtering power is 80W, the sputtering time is 7 minutes, and the substrate temperature is 2...

Embodiment 2

[0022] This embodiment is similar to Embodiment 1, except that the sputtering time of metal titanium in step 4) is 20 minutes, and a titanium oxide layer with a thickness of 0.06 μm is obtained on the surface of the tungsten trioxide layer. Sensitivity test was carried out on the prepared tungsten trioxide thin film gas sensor, and the relationship curve between sensitivity and working temperature is shown in curve 1 in Fig. 3 . It can be seen from Figure 3 that not only the operating temperature of the tungsten trioxide thin film gas sensor is greatly reduced, but also the sensitivity is greatly improved.

Embodiment 3

[0024] The present embodiment is similar to Embodiment 1, except that the working pressure of titanium sputtering in step 4) is 0.5Pa, the sputtering time is 15min, and the flow rate of argon gas is 22ml / min. Titanium oxide layer with a thickness of 0.04 μm.

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Abstract

The invention discloses a surface modification method of the tungstic oxide film gas sensor. The process includes: cleaning the Al203 base sheet; spurting the interdigital electrode on the base sheet in the magnetron sputtering device using the platinum as the target and the argon gas as the working gas; spurting the tungstic oxide film on the base sheet with the interdigital electrode using the tungsten as the target and the argon, oxygen as the working gas; spurting the metal layer on the film using the Ti, Ni, Mo, Va, Platinum, Aurum or Pd as the target material and the argon gas as the working gas; heat process to the metal layer in air and get the surface modifying gas sensor. The film is uniform and high purity which is good adhesion to the base bottom and the parameter is easy to control. The gas sensor has the low working temperature and good selectivity, also the response and recovery time are shot.

Description

technical field [0001] The invention relates to a surface modification method of a tungsten trioxide film gas sensor, which belongs to the gas sensor technology. Background technique [0002] In industrial production and daily life, people have widely used gas sensors to detect toxic gases and flammable and explosive gases to ensure the safety of production and life. Therefore, the requirements for gas sensors are getting higher and higher, which will inevitably promote the development of gas sensors with high sensitivity, high reliability and high selectivity. Among many gas sensitive materials, WO 3 It stands out for its excellent gas-sensing properties and high stability. The research on tungsten trioxide film has been carried out for more than 20 years, but most of the researches are aimed at its electrochromic, photochromic, electrochemical and other properties, and the research on gas-sensing properties has only started in recent years. Tungsten trioxide is an n-typ...

Claims

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Application Information

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IPC IPC(8): G01N27/28G01N27/407
Inventor 胡明尹英哲冯有才陈鹏张伟张绪瑞刘志刚
Owner TIANJIN UNIV
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