Storage device and semiconductor device

一种存储设备、半导体的技术，应用在半导体器件、半导体/固态器件制造、静态存储器等方向，能够解决铁电薄膜技术困难、有延迟等问题

Inactive Publication Date: 2007-01-10
SEMICON ENERGY LAB CO LTD
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a delay in the practical application of this FeRAM due to technical difficulties in thinning the ferroelectric film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Storage device and semiconductor device
  • Storage device and semiconductor device
  • Storage device and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0049] Embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the scope and spirit of the present invention. Accordingly, the invention is not to be construed as being limited to the description of the various embodiments shown herein. It should be noted that reference numerals denoting like items may be used commonly in the drawings for structures described hereafter.

Embodiment approach 1

[0051] This embodiment mode will describe a structural example of a memory device (hereinafter also referred to as a memory circuit or an organic memory) in which an organic compound is provided between two conductive layers, see the drawings.

[0052] like figure 1 As shown, a glass substrate made of barium borosilicate glass, aluminoborosilicate glass, or the like, a quartz substrate, a ceramic substrate, or the like can be used as the substrate 30 . A metal substrate including stainless steel, or a semiconductor substrate on which an insulating layer is formed may also be used. Although substrates made of flexible synthetic resins of plastic such as PET generally tend to have a lower allowable temperature limit than the above substrates, it is still possible to use substrates made of flexible synthetic resins as long as the substrates can withstand the processing temperatures in the manufacturing steps. fabricated substrates.

[0053] As one or both of the first conductiv...

Embodiment approach 2

[0075] This embodiment mode will describe a structural example of a memory circuit including an organic compound layer in a memory element portion with reference to the drawings. More specifically, this embodiment mode will show the case of a memory circuit having a passive matrix structure.

[0076] Figure 5A A structural example of a semiconductor device of the present invention is shown, including: a memory cell array 22 in which memory cells 21 are arranged in a matrix form; a bit line driver circuit 26 having a column decoder 26a, a read circuit 26b, and a selector 26c; A line driver circuit 24 having a row decoder 24a and a level shifter 24b; and an interface 23 having a writing circuit and the like to communicate with the outside. Note that the structure of the memory circuit 16 shown here is only an example, and the memory circuit 16 may also include other circuits such as a sense amplifier, an output circuit, and a buffer circuit, and in addition, a write circuit ma...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An object of the present invention is to provide nonvolatile, rewritable, easily-manufactured, and inexpensive storage element, storage device, and semiconductor device, which are superior in switching characteristics and which has low operation voltage. In an element including a first conductive layer, a second conductive layer facing the first conductive layer, and a layer containing at least one kind of an organic compound provided between the first conductive layer and the second conductive layer, the organic compound can be electrochemically doped or dedoped. By feeding current in this element, the organic compound provided between the conductive layers is electrochemically doped, i.e., electrons are transported, whereby the conductivity can be increased by about three to ten digits.

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly, to semiconductor devices capable of storing, erasing and rewriting data by using organic compounds for memory circuits. Furthermore, the present invention relates to a memory circuit (memory device) capable of storing, erasing, and rewriting data by using an organic compound. Background technique [0002] In recent years, attention has been drawn to identification technology for production, management, etc., in which an ID (Identification Code) is assigned to each object to reveal data about the object, such as its history. Most importantly, semiconductor devices have been developed that can send and receive data without contact. In particular, like these semiconductor devices, RFID (Radio Frequency Identification) tags (also called ID tags, IC tags, IC chips, RF (Radio Frequency) tags, wireless tags, electronic tags, or wireless chips) and the like have been introduced int...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L27/28
CPCH01L27/285B82Y10/00H01L51/0591G11C13/0016G11C13/0014G11C13/0009H10K19/202H10K10/50
Inventor 野村亮二
Owner SEMICON ENERGY LAB CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap