Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Laminating method and laminating device

A technology for bonding devices and bonding surfaces, applied in lamination devices, chemical instruments and methods, lamination auxiliary operations, etc., can solve problems such as difficulties in bonding foils, and achieve reliable bonding effects

Inactive Publication Date: 2006-09-06
TOKYO ELECTRON LTD
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, if you want to apply the techniques in the aforementioned JP-A-8-139165 and JP-A-10-12578, there are still problems of processing time and accuracy. In addition, the above-mentioned foils with a thickness of 100 μm or less are bonded by these techniques. shape is also more difficult

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laminating method and laminating device
  • Laminating method and laminating device
  • Laminating method and laminating device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0028] figure 1 is a schematic diagram of an example of the overall structure of a bonding system equipped with a bonding device according to an embodiment of the present invention. This bonding system 100 includes: a loading / unloading unit 10 for loading and unloading a thin plate body 1 to be bonded and a carrier 2 for transporting the thin plate body 1; Combining mechanism part 30, and conveying mechanism part 20 between them.

[0029] The bonding mechanism part 30 is provided with a bonding device 40 . This bonding device 40 has an apparatus main body 31 disposed in the center, and a liquid crystal wax supply mechanism 32 disposed on the side of the apparatus main body 31 for supplying liquid crystal wax to the carrier 2 in transit. In addition, reference numerals 33 and 34 in the illustration denote an upper side positioning mechanism and a lower side positionin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

A pasting method and a pasting apparatus hold a thin plate 1 and a planar member 2 in high flatness respectively on a first holding member 44 and a second holding member 44, a main controller 40a controls a moving mechanism 45 and a parallelism adjusting mechanism 52 on the basis of information provided by position recognizing mechanisms 33 and 34 to align the thin plate 1 and the carrying member 2 with each other in a predetermined positional relation. The main controller 40a controls a moving mechanism 45 so as to move the thin plate 1 and the carrying member 2 relative to each other in a state where a liquid-phase liquid crystal wax heated by a heater 49 is held between the thin plate 1 and the carrying member 2 to spread the liquid-phase liquid crystal wax over the entire surfaces of the thin plate 1 and the carrying member 2. Thus the thin plate 1, such as a semiconductor wafer or a metal foil, can be accurately, surely and efficiently pasted to the carrying member 2, and the thin plate 1 pasted to the carrying member 2 can be readily separated from the carrying member 2.

Description

technical field [0001] The present invention relates to a bonding method and a bonding device for bonding thin plate-like objects such as semiconductor wafers or metal foils to other objects. Background technique [0002] In the manufacture of semiconductor equipment, with the increase in size and thickness of semiconductor wafers (hereinafter referred to as wafers), warpage or cracks during wafer handling cannot be ignored. For example, if warping occurs during wafer transfer, CMP polishing, dry etching, or ion implantation, while the wafer is being attracted to an electrostatic chuck, etc., high-precision processing cannot be performed. In addition, there is a problem that cracks easily occur. [0003] For this reason, it has been proposed to bond a wafer to a support substrate with an adhesive such as wax and perform a process such as polishing. For example, in the Japanese Patent Laid-Open Publication No. 8-139165, the technology of bonding them with a stamper is discl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/68H01L21/304B32B37/12B32B38/18H01L21/00H01L21/683
CPCB32B2038/1891H01L21/67092B32B37/1284H01L27/14634B32B38/1833H01L21/68H01L21/02
Inventor 有贺刚萩原顺一大加濑亘山口永司
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products