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High-precision three-dimensional micro-assembling method and assembly parts based on MEMS

A micro-assembly and high-precision technology, applied in microstructure devices, processing microstructure devices, measurement devices, etc., can solve the problem of limited types of MEMS devices, incomplete optimization of device performance, and inability to realize hybrid integration of multiple MEMS devices, etc. problem, to achieve the effect of high-precision assembly

Inactive Publication Date: 2006-07-19
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the most popular POST-CMOS process method has achieved some commercial success, the types of MEMS devices fabricated using this method are limited, and due to limitations in materials, temperature, etc., device performance cannot be fully optimized.
In addition, the interdisciplinary and cross-energy domain characteristics of MEMS devices determine the diversity of their processing technology. The processing technology of each type of MEMS device has restrictions on materials, processing scales and process parameters, and it is impossible to realize the mixing of various MEMS devices. integrated

Method used

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  • High-precision three-dimensional micro-assembling method and assembly parts based on MEMS
  • High-precision three-dimensional micro-assembling method and assembly parts based on MEMS
  • High-precision three-dimensional micro-assembling method and assembly parts based on MEMS

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] 1. Substrate preparation:

[0025] (1) growing an insulating layer such as silicon dioxide on the substrate;

[0026] (2) sputter metal adhesion layer and seed layer, and define metal interconnection;

[0027] (3) Define the position of the groove and plate the solder bump;

[0028] (4) Remove the seed layer and metal adhesion layer

[0029] (5) Use photosensitive polymer materials to make micro-fixtures, such as spin-coated SU8;

[0030] (6) Alignment grooves are formed by etching deep grooves in bulk silicon, see figure 1 .

[0031] 2. Preparation of chips to be assembled:

[0032] (1) growing an insulating layer such as silicon dioxide on the substrate;

[0033] (2) sputter metal adhesion layer and seed layer, and define metal interconnection;

[0034] (3) Plating solder bumps;

[0035] (5) Plating alignment posts, such as metal Au;

[0036] (6) Remove the seed layer and metal adhesion layer, see figure 2 .

[0037] 3. Preliminary positioning using microg...

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Abstract

The invention discloses a high-precision three-dimensional micro-assembly method and combined component based on MEMS, which comprises the following steps: setting a micro-clamp to match the loading chip; setting the alignment part and alignment accessory and welding button on the corresponding substrate and loading chip separately; injecting liquid in the micro-clamp; putting the chip in the micro-clamp back-off; locating the chip on the substrate through alignment part and alignment accessory and welding fusion reflux.

Description

technical field [0001] The invention belongs to the technical field of micro-electro-mechanical systems (MEMS) processing, and in particular relates to a high-precision three-dimensional micro-assembly method based on MEMS. Background technique [0002] At present, many MEMS-IC integrated device products have come out one after another, such as integrated accelerometer sensors and display chips, integrated gyro sensors, etc. The monolithic integration process technology of MEMS and IC has been developed rapidly, but due to the incompatibility of the two processes and materials The design cycle is longer and the cost is higher. Although the most popular POST-CMOS process method has achieved some commercial success, the types of MEMS devices fabricated using this method are limited, and due to limitations in materials and temperature, device performance cannot be fully optimized. In addition, the interdisciplinary and cross-energy domain characteristics of MEMS devices determ...

Claims

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Application Information

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IPC IPC(8): B81C3/00G01P15/00G01C19/00
Inventor 陈兢杨梅舒琼
Owner PEKING UNIV
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