Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ferroelectric film alternating electric field heat treatment method

A heat treatment method and ferroelectric thin film technology, applied in the field of heat treatment technology, can solve the problem of high material cost

Inactive Publication Date: 2006-05-03
HARBIN INST OF TECH
View PDF1 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the existing substrate is Pt / Ti / SiO 2 There is a high residual stress in the ferroelectric film of / Si, and the problem of high material cost when the epitaxial ferroelectric film is deposited on a single crystal substrate to reduce the residual stress, thus providing an alternating electric field heat treatment method for a ferroelectric film, It can reduce the substrate to Pt / Ti / SiO 2 / Si ferroelectric thin film residual stress, and the process steps are simple and easy to operate, compared with the choice of single crystal substrate deposition epitaxial ferroelectric thin film to reduce residual stress and low cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ferroelectric film alternating electric field heat treatment method
  • Ferroelectric film alternating electric field heat treatment method
  • Ferroelectric film alternating electric field heat treatment method

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0008] Specific implementation mode one: as figure 1 Shown, this specific embodiment carries out according to the following steps: one, in Pt / Ti / SiO 2 Deposit ferroelectric thin film material on / Si substrate, and carry out high-temperature annealing crystallization, form ferroelectric thin film 1; 2, carry out secondary annealing to described ferroelectric thin film 1, and introduce alternating electric field in described secondary annealing process, The action direction of the alternating electric field is perpendicular to the film surface of the ferroelectric thin film 1, and the film surface of the ferroelectric thin film 1 faces upward and is kept isolated from the upper plate 2-1 of the alternating electric field generator. The purpose of keeping the film surface of the ferroelectric thin film 1 in an isolated state from the upper plate 2-1 is to avoid the clamping effect.

specific Embodiment approach 2

[0009] Specific implementation mode two: as figure 1 As shown, in the first specific embodiment, the generating device of the alternating electric field is composed of an adjustable transformer 3, an upper plate 2-1 and a lower plate 2-2, and one end of the mains is connected to the The input end of the pole plate 2-1, the other end of the commercial power is connected to the input end of the lower pole plate 2-2 through an adjustable transformer 3, and the upper pole plate 2-1 and the lower pole plate 2-2 are two mutually insulated conductive metal electrodes. Fix the distance between the upper pole plate 2-1 and the lower pole plate 2-2, then change the voltage applied between the upper pole plate 2-1 and the lower pole plate 2-2 by adjusting the output voltage of the adjustable transformer 3, The alternating electric field is thereby obtained. Using this method to obtain the required alternating electric field is simple, convenient and low in cost.

specific Embodiment approach 3

[0010] Embodiment 3: In Embodiment 1, the Curie point of the ferroelectric thin film material is in the range of 300°C to 800°C.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Curie pointaaaaaaaaaa
Login to View More

Abstract

The alternating electric field thermal treatment method for ferroelectric film, special to reduce residual stress in ferroelectric ceramics film, comprises: 1. depositing ferroelectric film material on Pt / Ti / SiO2 / Si base, annealing and crystallizing at high temperature to form film 1; 2.taking secondary anneal to the film 1 with alternating electrc field. This invention is used to ferroelectric ceramics film material with 300~800Deg Curie temperature, can decrease residual stress and process cost.

Description

Technical field: [0001] The invention relates to a heat treatment process, in particular to a heat treatment method for reducing the residual stress of a ferroelectric ceramic film. Background technique: [0002] In recent years, ferroelectric ceramics and their thin film materials, especially lead zirconate titanate Pb(Zr,Ti)O 3 (PZT) thin films are receiving widespread attention. This ceramic material has excellent piezoelectric, pyroelectric and ferroelectric properties, and the potential superiority of its thin film materials has received great attention, and has been applied in the fields of integrated circuits, aviation, micro-electromechanical systems and general engineering Inside. Although commercial applications have appeared, device fatigue and performance stability have always been the bottlenecks restricting the practical application of this type of thin film. Residual stress is an endogenous nature of thin film materials, which has become a difficulty in furt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/64C04B35/472C04B35/491C04B41/80
Inventor 费维栋杨帆
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com