Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and apparatus for testing tunnel magnetoresistive effect element, manufacturing method of tunnel magnetoresistive effect element and tunnel magnetoresistive effect element

A technology of tunneling magnetoresistance and manufacturing method, which is applied in the manufacture/processing of electromagnetic devices, functional testing of magnetic heads, and the manufacture of magnetic flux-sensitive magnetic heads, etc., which can solve the problems of costing a lot of manpower and time, and achieve effective and fast mass production The effect of convenient and error-free confirmation

Inactive Publication Date: 2006-02-01
TDK CORPARATION +1
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the test method disclosed in U.S. Patent No. 6,473,257 requires a performance test of the TMR read head element such as a TMR read head element electromagnetic conversion performance test, thereby taking a lot of manpower and time for determining the reliability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for testing tunnel magnetoresistive effect element, manufacturing method of tunnel magnetoresistive effect element and tunnel magnetoresistive effect element
  • Method and apparatus for testing tunnel magnetoresistive effect element, manufacturing method of tunnel magnetoresistive effect element and tunnel magnetoresistive effect element
  • Method and apparatus for testing tunnel magnetoresistive effect element, manufacturing method of tunnel magnetoresistive effect element and tunnel magnetoresistive effect element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053] Before describing the preferred embodiments of the present invention, the relevant circumstances leading to the present invention will first be introduced.

[0054] The inventors of the present application found that when the sensing current flowing through the TMR read head element is increased to a value that may cause breakdown of the element, the TMR read head element dominated by metal conduction and the TMR read head element dominated by tunnel current There are differences in the resistance change characteristics of each TMR read head element among the head elements.

[0055] figure 1 shows the characteristic between the normalized resistance (%) and the sense current Is (mA) for a plurality of TMR read head elements measured by the present inventors.

[0056] As shown in the figure, it should be noted that there are two groups, that is, for group A TMR read head elements, when the sense current increases, its resistance gradually decreases, and for group B TMR ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a method for testing a TMR element including a step of measuring a plurality of resistances of the TMR element by feeding a plurality of sense currents with different current values each other through the TMR element, a step of calculating a ratio of change in resistance from the measured plurality of resistances of the TMR element, and a step of evaluating the TMR element using the calculated ratio of change in resistance.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Japanese Patent Application No. 2004-220247 filed on July 28, 2004 and Japanese Patent Application No. 2005-081768 filed on March 22, 2005, which are incorporated herein by reference. technical field [0003] The present invention relates to methods and devices for testing tunnel magnetoresistance (TMR) elements, such as TMR read head elements or magnetoresistance random access memory (MRAM) cells utilizing the tunnel magnetoresistance effect, methods for manufacturing TMR elements, and TMR elements. Background technique [0004] During or after the manufacture of the magnetic head, an evaluation test is generally performed in order to determine whether a thin film magnetic head having a TMR read head element is a defect-free product. This evaluation test includes a reliability test, which is used to confirm whether the breakdown voltage of the MR head element is high enough to w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11B5/455G11B5/39H01L43/12H10N50/01
Inventor 蜂须贺望稻毛健治高桥法男清水达司黃柏坚
Owner TDK CORPARATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com