Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solid-state image pickup device and camera using the same solid-state image pickup device

一种摄像装置、固态的技术，应用在辐射控制装置、图像通信、彩色电视的零部件等方向

Inactive Publication Date: 2005-11-16
CANON KK
View PDF4 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, the amplified image sensor with frame memory according to this prior art has a problem related to the SN ratio

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid-state image pickup device and camera using the same solid-state image pickup device
  • Solid-state image pickup device and camera using the same solid-state image pickup device
  • Solid-state image pickup device and camera using the same solid-state image pickup device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0031] figure 1 A circuit diagram of a sensor along a signal path from a pixel to a sensor output in the first embodiment of the present invention is shown. Here, for the sake of simplicity, it is represented by one pixel, one storage unit, and one column of readout devices. In fact, it is as follows Figure 8 As shown, the pixels and memory cells are arranged in a two-dimensional shape, and the readout devices are arranged in columns. and in Figure 8 For simplicity, the pixels and storage units are represented by 3×3 pixels and storage units respectively, but the number of pixels and the number of storage units can also be set as required, and the number of storage units can be less than the number of pixels. For example, when signals from multiple pixels are summed or stored in memory cells at long intervals, the number of memory cells can be smaller than the number of pixels, but in order to form an image, the number of memory cells corresponding to the number of necessar...

no. 2 approach

[0039] image 3 A sensor circuit diagram showing a signal path from a pixel to a sensor output in the second embodiment of the present invention. exist image 3 Among them, the column amplifier 24 is a feedback type amplifier, and its output is transmitted to the negative input terminal through the coupling capacitor 34 . Therefore, the gain of the column amplifier 24 is determined by the ratio between the coupling capacitor 5 and the coupling capacitor 34 . The positive input terminal (+) is fixed at the clamp potential VR. The negative input terminal (−) is clamped to the clamp potential VR by applying the pulse [phi]C to the clamp transistor 6 . This is because the above-mentioned two input terminals are in a virtual short-circuit state. As a result, the pulse time for the action of this sensor structure is the same as figure 2 The pulse times for the first embodiment shown are the same. but, image 3 The circuit in has the feature that the coupling capacitor 5 used...

no. 3 approach

[0041] Figure 4 A sensor circuit diagram showing a signal path from a pixel to a sensor output in a third embodiment of the present invention. In this figure, the memory with the amplification function in the cell is used. For example, a structure disclosed in US Pat. No. 5,805,492, an amplified analog memory cell is known. exist Figure 4 Among them, the memory cell 35 is composed of an amplification transistor 36 , a memory selection transistor 37 , a write transistor 10 and a memory cell capacitor 9 .

[0042] The current feeding transistor 38 supplies a current to operate the amplifier transistor 36 as a source follower. In the third embodiment of the present invention, this amplified frame memory is used instead of the DRAM type memory used in the first and second embodiments.

[0043] Figure 5 is a pulse time chart showing the operation of the sensor according to the third embodiment of the present invention. according to Figure 4 , Figure 5 Description of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

PROBLEM TO BE SOLVED: To obtain a sensor output of high SN ratio while suppressing shift in operation timing of a pixel.

Description

technical field [0001] The present invention relates to a solid-state imaging device and an imaging system, and particularly to a photoelectric conversion pixel unit formed by arranging a plurality of pixels provided with at least a photoelectric conversion unit and a transistor for amplifying and outputting a signal from the photoelectric conversion unit A zoom-type solid-state imaging device and a camera. Background technique [0002] Conventionally, as a solid-state imaging device, a large number of CCDs having an excellent SN ratio have been used. However, on the other hand, the development of an amplifying solid-state imaging device, which is characterized by ease of use and low power consumption, is also in progress. An amplifying solid-state imaging device is a device that guides the signal charge stored in the light-receiving pixel to the control electrode of the transistor provided in the pixel portion, and outputs the amplified signal from the main electrode. Spe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/335H04N5/341H04N5/365H04N5/369H04N5/374H04N5/376H04N5/378
CPCH04N5/3658H04N5/3575H04N5/37457H04N25/616H04N25/677H04N25/778
Inventor 筱原真人
Owner CANON KK
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com