Equipment for reacting sputtering

A kind of equipment and reaction technology, applied in the field of reactive sputtering equipment, can solve the problem of low sputtering rate

Inactive Publication Date: 2005-09-28
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the contrary, in most cases, the sputtering rate of the reaction product is generally lower than that of the pure metal

Method used

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  • Equipment for reacting sputtering
  • Equipment for reacting sputtering
  • Equipment for reacting sputtering

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Embodiment Construction

[0022] figure 1 The principle of the sputtering device 1 is shown, and the sputtering device 1 includes: a sputtering chamber 2 , a cathode 3 , an anode 4 , a protective plate 5 , a voltage source 6 and a regulating circuit 7 . The cathode 3 comprises a tubular cathode part 8 to which a target 9 to be sputtered is mounted by means of a flange. Three permanent magnets 10 , 11 , 12 are arranged on the tubular cathode part 8 , and the three permanent magnets 10 , 11 , 12 are connected to each other via a yoke 13 . The cathode part 8 bears on a seal 14 on the edge of the opening in the sputtering chamber 2 . The voltage of the voltage source 6 is conducted via one electrode 15 of the regulating circuit 7 to the cathode part 8 and via its other electrode 16 to the anode 4 . Even if the voltage of the voltage source 6 fluctuates, the regulation circuit 7 keeps the voltage output to the anode-cathode path constant. The fluctuation of the discharge voltage is mainly affected by the...

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Abstract

A device for reactive sputtering, wherein a cathode is applied a discharge voltage for a plasma, and a working gas and a reactive gas are introduced into a sputter chamber. The total gas flow in the sputter chamber is controlled with the aid of a valve, while the ratio of the partial pressures of both gases is kept constant.

Description

technical field [0001] The invention relates to a device for reactive sputtering according to the preamble of patent claim 1 . Background technique [0002] Usually, in reactive sputtering, at least two gases are used: a gas, which in most cases is usually an inert gas, and which excites particles outside the target in ionized form; Compounds are formed. The compound is then deposited as a thin film layer on a substrate, such as a glass plate. [0003] In order to accelerate ions of a noble gas to a target, a voltage must be applied to the target. The voltage between the target and the counter depends inter alia on the gas pressure obtained within the sputtering chamber. If the non-conductive substrate to be coated is moving within the sputtering chamber, this voltage also depends on the specific position of the substrate. [0004] Therefore, the dependence of voltage on pressure can be interpreted as, at high pressure, atoms are still present in the gas volume, so that ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/00C23C14/54C23C14/56
CPCC23C14/0042
Inventor 托马斯·弗里茨冈特·克梅雷尔
Owner APPLIED MATERIALS INC
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