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III-V family high brilliancy composite coloured or white light luminous diode

A technology of light-emitting diodes and high brightness, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems that the brightness of white light needs to be improved.

Inactive Publication Date: 2005-05-25
金芃
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] 470 570 1.1 Therefore, the brightness of the white light emitted by the existing white light semiconductor light-emitting diodes still needs to be improved

Method used

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  • III-V family high brilliancy composite coloured or white light luminous diode
  • III-V family high brilliancy composite coloured or white light luminous diode
  • III-V family high brilliancy composite coloured or white light luminous diode

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[0031] (A) The light-emitting layer material of the high-brightness composite color or white light-emitting diode of the present invention is selected from a group of materials, and the materials include, but are not limited to: (aluminum x gallium 1-x) y indium 1- y phosphorus z nitrogen 1-z, wherein 0≤x<1, 0<y≤1, 0≤z<1. The intensity and color of the emitted light can be controlled by adjusting the thickness of the different luminescent layers and the ratio of the constituents (i.e. the values ​​of "x", "y", and "z" of the constituents of the luminescent layer), so that the composite light has color requested.

[0032] The first-type confinement layer is epitaxially grown on the growth substrate, the first light-emitting layer is epitaxially grown on the first-type confinement layer and emits light of the first wavelength, the transitional light-emitting layer is epitaxially grown on the first light-emitting layer, and the second light-emitting layer grows on the transition...

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Abstract

This invention discloses LED of III-V group high brightness composite color or white color. The principle of emitting white light is emitting blue and yellow complementary light or bordering upon solar light spectrum. One of the implement uses (aluminium x gallium 1-x)y indium phosphor z nitrogen 1-z. [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-yP.sub.zN.sub.1-z] as lighting layer material. Said invention also disclose a method for mass production of chip of said LED, which contains bonding epitaxy chip on heat and electric conductive support substrate by chip upset welding technology, stripping grown substrate, stacking up electrode with optimized pattern. Said chip has fine heat conductivity and light taking efficiency.

Description

technical field [0001] The invention discloses a III-V high-brightness compound color or white light light-emitting diode (LED) and a lamp, as well as a production process, which belongs to the field of semiconductor optoelectronics technology, and relates to a power-type compound color or white light semiconductor light-emitting diode chip and its low cost and high production capacity. method of mass production. Background technique [0002] A lot of effort has been invested in white semiconductor light-emitting diodes and white light-combined semiconductor light-emitting diodes. So far, there are four types of methods to emit white light: [0003] 1) Using wavelength conversion materials, including phosphors, photon-regenerating semiconductor materials, and dyes. [0004] 2) Combining red, green, and blue semiconductor light-emitting diode chips together. [0005] 3) Bonding two semiconductor light-emitting diode chips of complementary colors (for example, blue and yello...

Claims

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Application Information

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IPC IPC(8): H01L33/08H01L33/32
Inventor 彭晖彭刚
Owner 金芃
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