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Thulium adulterated yttrium aluminate laser crystal with oulput 2 micron wave band and its preparation technology

A laser crystal and preparation process technology, applied in the field of optoelectronic materials, can solve the problems of low conversion efficiency and increase the use cost of lasers, and achieve the effects of high conversion efficiency, low use cost and fast growth rate

Inactive Publication Date: 2004-12-22
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For LD-pumped Tm-doped 2μm band lasers, it should have higher laser conversion efficiency, but the lower conversion efficiency not only increases the cost of laser use, but also affects its further promotion

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Example 1: The doping concentration of pulling method growth is 4at% Tm 3+ Tm:YAP laser crystal.

[0019] Using intermediate frequency induction heating, put about 590g of pressed Tm:YAP raw material into a Φ66×45mm iridium crucible, and fill the furnace with 99.999% high-purity nitrogen as a protective gas after the furnace is evacuated, using the pulling method , growing b-axis crystals with a growth rate of 1.5mm / h and a rotational speed of 25rpm. The growth of the convex interface was controlled, and a colorless and transparent Tm:YAP crystal with a size of Φ23×120mm was grown. The equal-diameter part was about 80mm long and weighed about 260g.

Embodiment 2

[0020] Example 2: The doping concentration of pulling method growth is 6at% Tm 3+ Tm:YAP laser crystal.

[0021] Using intermediate frequency induction heating, put about 590g of pressed Tm:YAP raw material into a Φ66×45mm iridium crucible, and fill the furnace with 99.999% high-purity nitrogen as a protective gas after the furnace is evacuated, using the pulling method , growing b-axis crystals with a growth rate of 1.5mm / h and a rotational speed of 25rpm. The growth of the convex interface was controlled, and a colorless and transparent Tm:YAP crystal with a size of Φ21×120mm was grown. The isometric part was about 80mm long and weighed about 240g.

Embodiment 3

[0022] Example 3: The doping concentration is 12at% Tm by pulling method growth 3+ Laser Tm:YAP crystal.

[0023] Using intermediate frequency induction heating, put about 590g of pressed Tm:YAP raw material into a Φ66×45mm iridium crucible, and fill the furnace with 99.999% high-purity nitrogen as a protective gas after the furnace is evacuated, using the pulling method , growing b-axis crystals with a growth rate of 1.5mm / h and a rotational speed of 25rpm. The growth of the convex interface was controlled, and a colorless and transparent Tm:YAP crystal with a size of Φ18×90mm was grown. The isometric part was about 60mm long and weighed about 180g.

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PUM

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Abstract

A Tm doped YAlO3 laser crystal has a molecular formula: Tm: YAlO3. It is prepared through calcining raw materials, proportional mixing by grinding, hydraulic pressing to become block, putting in Ir crucible, sintering at 1300 deg.C for solid-phase reaction, smelting at 1900 deg.C under protection of inertial gas, and growing Tm:YAP crystal at 1900 deg.C while pulling up at 1.5 mm / hr and 25 rpm. It can emit 2 microns band which is safety to human eyes.

Description

technical field [0001] The invention relates to a laser crystal outputting a 2μm waveband, in particular to a thulium-doped yttrium aluminate laser crystal outputting a 2μm waveband, and belongs to the field of optoelectronic materials. Background technique [0002] Laser crystals that output 2μm bands are a class of laser materials with great application value, and have broad application prospects in many fields such as military radar, biomedicine, and environmental protection. The active ions of this type of laser crystal mainly include Tm 3+ 、Ho 3+ etc., the main matrix material is yttrium aluminum garnet (Y 3 Al 5 o 12 , hereinafter referred to as YAG). The Ho:YAG and Cr, Tm, Ho:YAG lasers that have been applied in the early stage or currently use a xenon lamp as the pump source, so the volume and life of the device are affected. Moreover, YAG crystal has a cubic structure, and laser materials based on it usually cause stress birefringence in the working substance ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/04C30B29/28
Inventor 陆燕玲王俊孙宝德李胜华张佼巫瑞智
Owner SHANGHAI JIAO TONG UNIV
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